Bicocca Open Archive

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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
EU - Europa 1.239
NA - Nord America 1.239
AS - Asia 656
SA - Sud America 3
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 3.140
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Nazione #
US - Stati Uniti d'America 1.227
IE - Irlanda 320
SG - Singapore 314
RU - Federazione Russa 264
SE - Svezia 252
HK - Hong Kong 195
IT - Italia 185
DE - Germania 162
CN - Cina 104
ID - Indonesia 22
GB - Regno Unito 19
CA - Canada 12
UA - Ucraina 10
FI - Finlandia 8
IN - India 8
NL - Olanda 7
BG - Bulgaria 6
BR - Brasile 3
IR - Iran 3
PH - Filippine 3
TW - Taiwan 3
EU - Europa 2
AL - Albania 1
AT - Austria 1
AU - Australia 1
AZ - Azerbaigian 1
CH - Svizzera 1
FR - Francia 1
GR - Grecia 1
JP - Giappone 1
RO - Romania 1
TH - Thailandia 1
VN - Vietnam 1
Totale 3.140
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Città #
Dublin 303
Singapore 280
Hong Kong 195
New York 191
Santa Clara 180
Frankfurt am Main 158
Chandler 100
Princeton 100
Milan 78
Ashburn 51
Lawrence 48
Fairfield 35
Shanghai 35
Beijing 27
Altamura 26
Ann Arbor 25
Jakarta 22
Andover 18
Ferrara 17
San Diego 15
Woodbridge 14
Cambridge 13
Wilmington 13
Rome 12
Guangzhou 10
San Giuseppe Vesuviano 10
Toronto 10
London 9
Seattle 9
Pune 8
Shenzhen 8
Bologna 7
Falls Church 7
Lappeenranta 7
Los Angeles 7
Houston 6
Kardzhali 6
Hangzhou 5
Washington 5
Fuzhou 4
Huskvarna 4
Norwalk 4
Redmond 4
Gravellona Toce 3
Laurel 3
Naaldwijk 3
Naples 3
Novosibirsk 3
São Paulo 3
Bollate 2
Chicago 2
Manila 2
Montréal 2
Pavia 2
Prescot 2
Amsterdam 1
Apo 1
Baguio City 1
Baku 1
Bangkok 1
Busto Arsizio 1
Carate Brianza 1
Castel Maggiore 1
Changsha 1
Changzhou 1
Dallas 1
Eggenstein-Leopoldshafen 1
Eindhoven 1
Helsinki 1
Jining 1
Jönköping 1
Kashan 1
Kilburn 1
Kloten 1
Langfang 1
Marlborough 1
Miami 1
Nanning 1
New Bedfont 1
Newark 1
Novate Milanese 1
Padova 1
Portlaoise 1
Preston 1
Ravenna 1
Riposto 1
San Mateo 1
Sandston 1
St Petersburg 1
Sundsvall 1
Sydney 1
Tainan City 1
Taipei 1
Tokyo 1
Trumbull 1
Vienna 1
Voronezh 1
Wandsworth 1
Wuxi 1
Zanjan 1
Totale 2.161
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Nome #
X-Band GaN Power Amplifier for Future Generation SAR Systems 80
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 61
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 57
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 52
GaN HEMT model extraction based on dynamic-bias measurements 52
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 51
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 50
On the evaluation of the high-frequency load line in active devices 50
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 50
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 49
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 49
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 48
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 47
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 47
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 46
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 46
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 46
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 46
Class-A power amplifier design technique based on electron device low-frequency characterization 46
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 45
Behavioral Modeling of GaN FETs: a Load-Line Approach 45
Scalability of Multifinger HEMT Performance 44
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 43
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 43
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 43
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 42
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 42
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 42
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 42
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 42
Thermal characterization of high-power GaN HEMTs up to 65 GHz 42
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 41
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 39
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 39
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 39
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 38
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 38
Extended operation of class-F power amplifiers using input waveform engineering 38
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 38
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 37
Current-gain in FETs beyond cut-off frequency 37
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 37
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 37
75-VDC GaN technology investigation from a degradation perspective 37
Power Amplifier Design Accounting for Input Large-Signal Matching 36
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 36
Waveform engineering: State-of-the-art and future trends (invited paper) 36
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 36
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 35
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 35
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 34
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 34
A procedure for the extraction of a nonlinear microwave GaN FET model 34
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 34
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 33
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 32
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 32
GaN power amplifier design exploiting wideband large-signal matching 31
Linear versus nonlinear de-embedding: Experimental investigation 31
Empowering GaN HEMT models: The gateway for power amplifier design 31
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 31
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 30
“Hybrid” Approach to Microwave Power Amplifier Design 30
Microwave FET model identification based on vector intermodulation measurements 30
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 29
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 29
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 28
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 28
A new description of fast charge-trapping effects in GaN FETs 28
Nonlinear Embedding and De-embedding: Theory and Applications 28
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 27
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 27
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 27
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 27
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 26
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 26
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 26
Evaluation of FET performance and restrictions by low-frequency measurements 26
Extremely Low-Frequency Measurements Using an Active Bias Tee 26
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 26
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 25
A new approach to Class-E power amplifier design 25
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 25
Nonlinear model for 40-GHz cold-FET operation 24
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 23
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 21
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 21
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 20
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 20
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 20
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 19
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 18
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 17
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 14
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 14
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 13
null 7
C-band power amplifier design based on low-frequency waveform engineering 4
Totale 3.408
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Categoria #
all - tutte 29.160
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.160
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20251.039 137 433 94 121 220 34 0 0 0 0 0 0
Totale 3.408