Bicocca Open Archive

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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
AS - Asia 4.948
NA - Nord America 3.926
EU - Europa 2.839
SA - Sud America 688
AF - Africa 114
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 12.525
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Nazione #
US - Stati Uniti d'America 3.621
SG - Singapore 1.762
IT - Italia 913
CN - Cina 794
HK - Hong Kong 767
RU - Federazione Russa 693
VN - Vietnam 567
BR - Brasile 522
BD - Bangladesh 344
IE - Irlanda 322
SE - Svezia 269
DE - Germania 243
CA - Canada 242
IN - India 151
KR - Corea 142
FR - Francia 115
GB - Regno Unito 67
AR - Argentina 65
IQ - Iraq 58
TR - Turchia 50
ID - Indonesia 48
PK - Pakistan 43
UA - Ucraina 37
SA - Arabia Saudita 32
ZA - Sudafrica 31
MX - Messico 30
JP - Giappone 29
VE - Venezuela 29
PH - Filippine 28
NL - Olanda 27
PL - Polonia 27
TW - Taiwan 26
AT - Austria 25
EC - Ecuador 24
CH - Svizzera 22
MY - Malesia 21
ES - Italia 20
KE - Kenya 20
UZ - Uzbekistan 18
MA - Marocco 17
PY - Paraguay 14
CO - Colombia 13
FI - Finlandia 13
AL - Albania 12
CL - Cile 11
DZ - Algeria 11
JM - Giamaica 11
NP - Nepal 10
TN - Tunisia 9
AE - Emirati Arabi Uniti 8
CR - Costa Rica 8
JO - Giordania 8
BG - Bulgaria 7
EG - Egitto 7
ET - Etiopia 7
UY - Uruguay 7
AU - Australia 6
AZ - Azerbaigian 6
LT - Lituania 6
HN - Honduras 5
PS - Palestinian Territory 5
CZ - Repubblica Ceca 4
GE - Georgia 4
KZ - Kazakistan 4
LB - Libano 4
OM - Oman 4
AM - Armenia 3
AO - Angola 3
DO - Repubblica Dominicana 3
IR - Iran 3
NI - Nicaragua 3
PT - Portogallo 3
SI - Slovenia 3
TH - Thailandia 3
BY - Bielorussia 2
CG - Congo 2
EU - Europa 2
PE - Perù 2
RO - Romania 2
RS - Serbia 2
SY - Repubblica araba siriana 2
BE - Belgio 1
BO - Bolivia 1
BS - Bahamas 1
BT - Bhutan 1
BW - Botswana 1
CI - Costa d'Avorio 1
CY - Cipro 1
DK - Danimarca 1
GR - Grecia 1
HR - Croazia 1
IL - Israele 1
LC - Santa Lucia 1
MK - Macedonia 1
MN - Mongolia 1
MZ - Mozambico 1
PA - Panama 1
SC - Seychelles 1
SN - Senegal 1
SO - Somalia 1
Totale 12.522
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Città #
Singapore 980
Hong Kong 755
San Jose 616
Ashburn 323
Milan 311
Dublin 305
New York 264
Santa Clara 218
Toronto 188
Ho Chi Minh City 180
Frankfurt am Main 167
Beijing 158
Hefei 152
Chicago 141
Hanoi 139
Seoul 135
The Dalles 125
Los Angeles 115
Rome 108
Dallas 102
Chandler 100
Princeton 100
Lauterbourg 91
Moscow 77
Lawrence 50
São Paulo 48
Buffalo 45
Shanghai 42
Tukwila 38
Fairfield 35
Council Bluffs 33
Bologna 31
Figino 31
Ferrara 30
Da Nang 27
Montreal 27
Altamura 26
Ann Arbor 25
Jakarta 23
Orem 23
Warsaw 23
Baghdad 22
Guangzhou 22
Tokyo 22
Haiphong 21
Nuremberg 21
Brooklyn 19
Nairobi 19
Andover 18
Brasília 18
London 18
Taipei 18
Wilmington 18
Houston 17
Naples 17
Seattle 17
Atlanta 16
Chennai 16
Lahore 16
San Diego 16
Tashkent 16
Zurich 16
Dhaka 15
Washington 15
Woodbridge 15
Pune 14
Cambridge 13
Denver 13
Rio de Janeiro 13
Riyadh 13
Johannesburg 12
Mumbai 12
New Delhi 12
Can Tho 11
Vienna 11
Biên Hòa 10
Boardman 10
Kuala Lumpur 10
Lappeenranta 10
Salt Lake City 10
San Giuseppe Vesuviano 10
Baltimore 9
Belo Horizonte 9
Columbus 9
Istanbul 9
Jeddah 9
Kent 9
Miami 9
Munich 9
Palermo 9
Philadelphia 9
San Francisco 9
Shenzhen 9
Tirana 9
Amman 8
Delhi 8
Guarulhos 8
Guayaquil 8
Hải Dương 8
Ninh Bình 8
Totale 7.184
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Nome #
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 306
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 283
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 216
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 215
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 187
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 183
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 183
X-Band GaN Power Amplifier for Future Generation SAR Systems 181
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 179
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 175
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 174
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 174
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 174
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 171
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 169
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 166
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 161
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 159
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 157
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 151
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 149
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 146
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 143
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 143
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 141
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 140
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 138
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 137
GaN HEMT model extraction based on dynamic-bias measurements 136
Empowering GaN HEMT models: The gateway for power amplifier design 129
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 127
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 125
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 124
Behavioral Modeling of GaN FETs: a Load-Line Approach 124
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 122
Scalability of Multifinger HEMT Performance 122
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 121
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 121
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 120
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 120
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 118
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 117
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 116
Power Amplifier Design Accounting for Input Large-Signal Matching 115
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 114
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 113
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 113
Class-A power amplifier design technique based on electron device low-frequency characterization 113
Nonlinear Embedding and De-embedding: Theory and Applications 111
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 110
Extended operation of class-F power amplifiers using input waveform engineering 110
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 110
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 109
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 108
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 108
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 106
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 106
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 106
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 105
Current-gain in FETs beyond cut-off frequency 103
On the evaluation of the high-frequency load line in active devices 103
Waveform engineering: State-of-the-art and future trends (invited paper) 102
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 102
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 101
Thermal characterization of high-power GaN HEMTs up to 65 GHz 101
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 100
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 100
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 99
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 99
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 98
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 96
Linear versus nonlinear de-embedding: Experimental investigation 96
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 95
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 95
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 94
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 94
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 94
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 94
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 93
“Hybrid” Approach to Microwave Power Amplifier Design 92
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 92
Nonlinear model for 40-GHz cold-FET operation 92
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 91
GaN power amplifier design exploiting wideband large-signal matching 91
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 91
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 90
A new approach to Class-E power amplifier design 90
A procedure for the extraction of a nonlinear microwave GaN FET model 89
75-VDC GaN technology investigation from a degradation perspective 89
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 87
Microwave FET model identification based on vector intermodulation measurements 87
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 87
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 87
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 86
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 86
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 85
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 84
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 83
Evaluation of FET performance and restrictions by low-frequency measurements 81
Extremely Low-Frequency Measurements Using an Active Bias Tee 80
Totale 12.299
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Categoria #
all - tutte 59.077
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 59.077
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20252.995 137 433 94 113 217 40 129 108 264 550 300 610
2025/20267.245 583 497 389 666 571 339 1.011 441 724 577 505 942
2026/2027226 226 0 0 0 0 0 0 0 0 0 0 0
Totale 12.835