Bicocca Open Archive

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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
NA - Nord America 5.107
AS - Asia 4.988
EU - Europa 2.970
SA - Sud America 702
Continente sconosciuto - Info sul continente non disponibili 323
AF - Africa 115
OC - Oceania 6
Totale 14.211
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Nazione #
US - Stati Uniti d'America 4.764
SG - Singapore 1.764
IT - Italia 1.001
CN - Cina 803
HK - Hong Kong 768
RU - Federazione Russa 693
VN - Vietnam 572
BR - Brasile 525
BD - Bangladesh 354
IE - Irlanda 324
SE - Svezia 291
CA - Canada 260
DE - Germania 243
IN - India 152
KR - Corea 142
FR - Francia 116
GB - Regno Unito 76
AR - Argentina 65
IQ - Iraq 58
ID - Indonesia 50
TR - Turchia 50
PK - Pakistan 45
UA - Ucraina 37
SA - Arabia Saudita 34
VE - Venezuela 33
MX - Messico 32
ZA - Sudafrica 32
JP - Giappone 30
PL - Polonia 29
PH - Filippine 28
TW - Taiwan 28
NL - Olanda 27
AT - Austria 25
EC - Ecuador 25
CH - Svizzera 24
ES - Italia 23
MY - Malesia 23
KE - Kenya 20
CO - Colombia 19
UZ - Uzbekistan 18
MA - Marocco 17
JM - Giamaica 16
PY - Paraguay 14
FI - Finlandia 13
AL - Albania 12
CL - Cile 11
CR - Costa Rica 11
DZ - Algeria 11
NP - Nepal 10
AE - Emirati Arabi Uniti 9
TN - Tunisia 9
JO - Giordania 8
BG - Bulgaria 7
EG - Egitto 7
ET - Etiopia 7
UY - Uruguay 7
AU - Australia 6
AZ - Azerbaigian 6
LT - Lituania 6
HN - Honduras 5
PS - Palestinian Territory 5
CZ - Repubblica Ceca 4
GE - Georgia 4
KZ - Kazakistan 4
LB - Libano 4
NI - Nicaragua 4
OM - Oman 4
AM - Armenia 3
AO - Angola 3
DO - Repubblica Dominicana 3
IR - Iran 3
PT - Portogallo 3
SI - Slovenia 3
TH - Thailandia 3
BS - Bahamas 2
BY - Bielorussia 2
CG - Congo 2
EE - Estonia 2
EU - Europa 2
GT - Guatemala 2
PE - Perù 2
RO - Romania 2
RS - Serbia 2
SY - Repubblica araba siriana 2
TT - Trinidad e Tobago 2
BB - Barbados 1
BE - Belgio 1
BO - Bolivia 1
BT - Bhutan 1
BW - Botswana 1
CI - Costa d'Avorio 1
CY - Cipro 1
DK - Danimarca 1
GD - Grenada 1
GR - Grecia 1
HR - Croazia 1
IL - Israele 1
LC - Santa Lucia 1
MK - Macedonia 1
MN - Mongolia 1
Totale 13.882
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Città #
Singapore 981
San Jose 798
Hong Kong 756
Ashburn 415
Milan 349
Dublin 305
New York 276
Santa Clara 241
Toronto 189
Ho Chi Minh City 183
Council Bluffs 169
Frankfurt am Main 167
Beijing 158
Hefei 152
Chicago 143
Hanoi 139
Seoul 135
Los Angeles 130
The Dalles 127
Rome 120
Dallas 107
Princeton 103
Chandler 100
Lauterbourg 91
Moscow 77
Buffalo 50
Lawrence 50
São Paulo 48
Shanghai 44
Tukwila 38
Bologna 35
Fairfield 35
Figino 33
Montreal 31
Ferrara 30
Da Nang 27
Altamura 26
Columbus 26
Ann Arbor 25
Brooklyn 25
Warsaw 25
Jakarta 24
Orem 23
Tokyo 23
Baghdad 22
Guangzhou 22
Atlanta 21
Haiphong 21
Naples 21
Nuremberg 21
Phoenix 21
Houston 20
London 20
Seattle 20
Washington 20
Nairobi 19
Taipei 19
Andover 18
Brasília 18
San Diego 18
Wilmington 18
Chennai 16
Denver 16
Lahore 16
Tashkent 16
Zurich 16
Dhaka 15
Philadelphia 15
Woodbridge 15
Pune 14
Rio de Janeiro 14
Riyadh 14
Cambridge 13
Johannesburg 12
Mumbai 12
New Delhi 12
Can Tho 11
Salt Lake City 11
Vienna 11
Biên Hòa 10
Boardman 10
Kingston 10
Kuala Lumpur 10
Lappeenranta 10
Miami 10
San Francisco 10
San Giuseppe Vesuviano 10
Baltimore 9
Belo Horizonte 9
Delhi 9
Guayaquil 9
Istanbul 9
Jeddah 9
Kent 9
Munich 9
Palermo 9
Shenzhen 9
Tirana 9
Amman 8
Caracas 8
Totale 7.812
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Nome #
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 334
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 308
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 234
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 223
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 217
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 205
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 199
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 199
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 198
X-Band GaN Power Amplifier for Future Generation SAR Systems 195
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 191
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 190
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 189
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 187
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 183
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 177
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 176
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 175
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 166
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 164
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 163
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 162
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 159
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 153
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 151
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 148
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 147
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 142
GaN HEMT model extraction based on dynamic-bias measurements 142
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 139
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 137
Empowering GaN HEMT models: The gateway for power amplifier design 137
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 132
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 132
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 132
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 132
Behavioral Modeling of GaN FETs: a Load-Line Approach 131
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 130
Scalability of Multifinger HEMT Performance 130
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 129
Power Amplifier Design Accounting for Input Large-Signal Matching 127
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 126
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 125
Class-A power amplifier design technique based on electron device low-frequency characterization 125
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 124
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 124
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 123
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 122
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 121
Nonlinear Embedding and De-embedding: Theory and Applications 119
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 118
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 117
Extended operation of class-F power amplifiers using input waveform engineering 117
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 116
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 115
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 115
Current-gain in FETs beyond cut-off frequency 114
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 113
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 113
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 112
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 112
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 112
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 111
Waveform engineering: State-of-the-art and future trends (invited paper) 111
On the evaluation of the high-frequency load line in active devices 111
Thermal characterization of high-power GaN HEMTs up to 65 GHz 111
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 109
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 109
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 108
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 107
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 106
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 105
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 104
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 104
Linear versus nonlinear de-embedding: Experimental investigation 103
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 102
75-VDC GaN technology investigation from a degradation perspective 102
GaN power amplifier design exploiting wideband large-signal matching 101
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 101
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 101
Nonlinear model for 40-GHz cold-FET operation 101
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 101
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 99
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 99
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 98
“Hybrid” Approach to Microwave Power Amplifier Design 98
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 98
A procedure for the extraction of a nonlinear microwave GaN FET model 98
A new approach to Class-E power amplifier design 97
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 96
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 96
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 96
Microwave FET model identification based on vector intermodulation measurements 95
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 94
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 94
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 94
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 93
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 91
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 90
Evaluation of FET performance and restrictions by low-frequency measurements 87
Totale 13.369
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Categoria #
all - tutte 63.920
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 63.920
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20252.995 137 433 94 113 217 40 129 108 264 550 300 610
2025/20267.245 583 497 389 666 571 339 1.011 441 724 577 505 942
2026/20271.602 307 434 861 0 0 0 0 0 0 0 0 0
Totale 14.211