Bicocca Open Archive

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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
AS - Asia 4.664
NA - Nord America 3.075
EU - Europa 2.306
SA - Sud America 687
AF - Africa 114
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 10.856
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Nazione #
US - Stati Uniti d'America 2.966
SG - Singapore 1.758
CN - Cina 785
HK - Hong Kong 763
RU - Federazione Russa 693
VN - Vietnam 560
BR - Brasile 522
IT - Italia 386
IE - Irlanda 322
SE - Svezia 266
DE - Germania 243
IN - India 147
KR - Corea 141
FR - Francia 115
BD - Bangladesh 92
GB - Regno Unito 66
AR - Argentina 64
IQ - Iraq 58
CA - Canada 56
TR - Turchia 50
ID - Indonesia 48
PK - Pakistan 43
UA - Ucraina 37
SA - Arabia Saudita 32
ZA - Sudafrica 31
MX - Messico 30
JP - Giappone 29
VE - Venezuela 29
PH - Filippine 28
PL - Polonia 27
NL - Olanda 26
AT - Austria 25
EC - Ecuador 24
TW - Taiwan 24
CH - Svizzera 22
ES - Italia 20
KE - Kenya 20
MY - Malesia 20
UZ - Uzbekistan 18
MA - Marocco 17
PY - Paraguay 14
CO - Colombia 13
FI - Finlandia 13
AL - Albania 12
CL - Cile 11
DZ - Algeria 11
NP - Nepal 10
JM - Giamaica 9
TN - Tunisia 9
AE - Emirati Arabi Uniti 8
JO - Giordania 8
CR - Costa Rica 7
EG - Egitto 7
ET - Etiopia 7
UY - Uruguay 7
AU - Australia 6
AZ - Azerbaigian 6
BG - Bulgaria 6
LT - Lituania 6
PS - Palestinian Territory 5
CZ - Repubblica Ceca 4
GE - Georgia 4
KZ - Kazakistan 4
LB - Libano 4
OM - Oman 4
AM - Armenia 3
AO - Angola 3
DO - Repubblica Dominicana 3
IR - Iran 3
PT - Portogallo 3
SI - Slovenia 3
TH - Thailandia 3
BY - Bielorussia 2
CG - Congo 2
EU - Europa 2
PE - Perù 2
RO - Romania 2
RS - Serbia 2
SY - Repubblica araba siriana 2
BE - Belgio 1
BO - Bolivia 1
BT - Bhutan 1
BW - Botswana 1
CI - Costa d'Avorio 1
CY - Cipro 1
DK - Danimarca 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
IL - Israele 1
LC - Santa Lucia 1
MK - Macedonia 1
MN - Mongolia 1
MZ - Mozambico 1
NI - Nicaragua 1
PA - Panama 1
SC - Seychelles 1
SN - Senegal 1
SO - Somalia 1
SX - ???statistics.table.value.countryCode.SX??? 1
Totale 10.854
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Città #
Singapore 978
Hong Kong 753
San Jose 488
Dublin 305
Ashburn 289
New York 227
Santa Clara 198
Ho Chi Minh City 176
Frankfurt am Main 167
Beijing 154
Hefei 152
Hanoi 139
Milan 138
Chicago 137
Seoul 135
The Dalles 125
Chandler 100
Princeton 100
Lauterbourg 91
Los Angeles 91
Dallas 88
Moscow 77
Lawrence 48
São Paulo 48
Shanghai 42
Fairfield 35
Buffalo 31
Da Nang 27
Ferrara 27
Altamura 26
Bologna 26
Council Bluffs 26
Ann Arbor 25
Montreal 25
Jakarta 23
Warsaw 23
Baghdad 22
Guangzhou 22
Orem 22
Rome 22
Tokyo 22
Haiphong 21
Nuremberg 21
Nairobi 19
Andover 18
Brasília 18
Taipei 18
Toronto 18
London 17
Chennai 16
Lahore 16
San Diego 16
Tashkent 16
Wilmington 16
Zurich 16
Brooklyn 15
Dhaka 15
Pune 14
Woodbridge 14
Cambridge 13
Houston 13
Rio de Janeiro 13
Riyadh 13
Seattle 13
Denver 12
Johannesburg 12
New Delhi 12
Can Tho 11
Vienna 11
Biên Hòa 10
Lappeenranta 10
Mumbai 10
Salt Lake City 10
San Giuseppe Vesuviano 10
Belo Horizonte 9
Istanbul 9
Jeddah 9
Kent 9
Kuala Lumpur 9
Munich 9
Shenzhen 9
Tirana 9
Amman 8
Delhi 8
Guarulhos 8
Guayaquil 8
Hải Dương 8
Ninh Bình 8
San Francisco 8
Xi'an 8
Caracas 7
Changsha 7
Curitiba 7
Elk Grove Village 7
Falls Church 7
Naples 7
Phoenix 7
Quito 7
Salvador 7
Addis Ababa 6
Totale 6.332
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Nome #
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 286
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 203
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 178
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 175
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 173
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 166
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 161
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 160
X-Band GaN Power Amplifier for Future Generation SAR Systems 159
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 158
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 155
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 154
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 151
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 151
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 150
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 143
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 141
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 138
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 138
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 136
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 132
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 129
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 128
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 123
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 120
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 117
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 115
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 113
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 113
Scalability of Multifinger HEMT Performance 112
Behavioral Modeling of GaN FETs: a Load-Line Approach 108
GaN HEMT model extraction based on dynamic-bias measurements 108
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 107
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 105
Empowering GaN HEMT models: The gateway for power amplifier design 105
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 105
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 104
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 103
Class-A power amplifier design technique based on electron device low-frequency characterization 103
Power Amplifier Design Accounting for Input Large-Signal Matching 101
Extended operation of class-F power amplifiers using input waveform engineering 100
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 100
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 99
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 98
On the evaluation of the high-frequency load line in active devices 98
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 97
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 97
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 96
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 96
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 96
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 96
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 96
Nonlinear Embedding and De-embedding: Theory and Applications 95
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 95
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 93
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 93
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 92
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 92
Thermal characterization of high-power GaN HEMTs up to 65 GHz 92
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 91
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 91
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 90
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 90
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 89
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 89
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 89
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 88
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 88
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 88
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 86
“Hybrid” Approach to Microwave Power Amplifier Design 86
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 86
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 85
Linear versus nonlinear de-embedding: Experimental investigation 85
A new approach to Class-E power amplifier design 85
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 84
Current-gain in FETs beyond cut-off frequency 84
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 84
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 84
GaN power amplifier design exploiting wideband large-signal matching 83
Microwave FET model identification based on vector intermodulation measurements 83
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 83
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 83
A procedure for the extraction of a nonlinear microwave GaN FET model 83
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 82
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 81
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 81
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 81
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 80
Waveform engineering: State-of-the-art and future trends (invited paper) 79
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 79
75-VDC GaN technology investigation from a degradation perspective 78
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 76
Extremely Low-Frequency Measurements Using an Active Bias Tee 74
A new description of fast charge-trapping effects in GaN FETs 74
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 74
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 74
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 74
Nonlinear model for 40-GHz cold-FET operation 73
Evaluation of FET performance and restrictions by low-frequency measurements 72
Totale 10.737
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Categoria #
all - tutte 52.230
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 52.230
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20252.995 137 433 94 113 217 40 129 108 264 550 300 610
2025/20265.802 583 497 389 666 571 339 1.011 441 724 577 4 0
Totale 11.166