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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
EU - Europa 1.879
AS - Asia 1.811
NA - Nord America 1.454
SA - Sud America 99
AF - Africa 17
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 3
Totale 5.266
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Nazione #
US - Stati Uniti d'America 1.425
HK - Hong Kong 694
RU - Federazione Russa 671
SG - Singapore 643
IE - Irlanda 320
IT - Italia 262
SE - Svezia 258
DE - Germania 221
CN - Cina 181
VN - Vietnam 119
BR - Brasile 79
KR - Corea 49
GB - Regno Unito 28
IN - India 27
UA - Ucraina 26
CA - Canada 25
ID - Indonesia 24
AT - Austria 23
NL - Olanda 21
BD - Bangladesh 12
FI - Finlandia 9
TR - Turchia 9
CH - Svizzera 8
JP - Giappone 8
PL - Polonia 8
TW - Taiwan 8
VE - Venezuela 8
AR - Argentina 6
BG - Bulgaria 6
FR - Francia 6
ZA - Sudafrica 6
IQ - Iraq 5
PH - Filippine 5
PK - Pakistan 5
CZ - Repubblica Ceca 4
MA - Marocco 4
AM - Armenia 3
AU - Australia 3
IR - Iran 3
MY - Malesia 3
SA - Arabia Saudita 3
UY - Uruguay 3
UZ - Uzbekistan 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
EC - Ecuador 2
EG - Egitto 2
ES - Italia 2
EU - Europa 2
KE - Kenya 2
MX - Messico 2
TN - Tunisia 2
AZ - Azerbaigian 1
CR - Costa Rica 1
ET - Etiopia 1
GR - Grecia 1
HR - Croazia 1
IL - Israele 1
JM - Giamaica 1
JO - Giordania 1
NP - Nepal 1
PT - Portogallo 1
PY - Paraguay 1
RO - Romania 1
SX - ???statistics.table.value.countryCode.SX??? 1
TH - Thailandia 1
Totale 5.266
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Città #
Hong Kong 694
Singapore 380
Dublin 303
New York 198
Santa Clara 181
Frankfurt am Main 158
Milan 112
Chandler 100
Princeton 100
Moscow 75
Ashburn 59
Hefei 56
Seoul 49
Lawrence 48
Ho Chi Minh City 43
Fairfield 35
Shanghai 35
Beijing 33
Hanoi 29
Altamura 26
Ann Arbor 25
Ferrara 22
Jakarta 22
Nuremberg 19
Andover 18
San Diego 15
Woodbridge 14
Cambridge 13
Rome 13
Toronto 13
Wilmington 13
Bologna 12
Los Angeles 12
Guangzhou 11
London 11
Seattle 11
San Giuseppe Vesuviano 10
Vienna 10
Brooklyn 9
Kent 9
Munich 9
São Paulo 9
Lappeenranta 8
Pune 8
Shenzhen 8
Falls Church 7
Haiphong 7
Houston 7
Montreal 7
Chicago 6
Da Nang 6
Kardzhali 6
Washington 6
Zurich 6
Akola 5
Brasília 5
Hangzhou 5
Peschiera Borromeo 5
Tokyo 5
Tongchuanshi 5
Warsaw 5
Council Bluffs 4
Dhaka 4
Fuzhou 4
Huskvarna 4
Naples 4
Norwalk 4
Redmond 4
Secaucus 4
Amsterdam 3
Biên Hòa 3
Boston 3
Chennai 3
Dallas 3
Gravellona Toce 3
Ha Long 3
Laurel 3
Manaus 3
Montevideo 3
Monza 3
Naaldwijk 3
Nizhniy Novgorod 3
Novosibirsk 3
Quận Một 3
Rzeszów 3
San Francisco 3
Shah Alam 3
Taichung 3
Taipei 3
The Dalles 3
Thái Nguyên 3
Xi'an 3
Bari 2
Belo Horizonte 2
Bollate 2
Bursa 2
Cairo 2
Caracas 2
Caxias do Sul 2
Chengdu 2
Totale 3.248
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Nome #
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 132
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 116
X-Band GaN Power Amplifier for Future Generation SAR Systems 104
Scalability of Multifinger HEMT Performance 78
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 76
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 75
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 74
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 72
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 72
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 72
Extended operation of class-F power amplifiers using input waveform engineering 71
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 68
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 68
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 68
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 67
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 65
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 64
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 64
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 64
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 63
On the evaluation of the high-frequency load line in active devices 63
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 63
GaN HEMT model extraction based on dynamic-bias measurements 63
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 62
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 62
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 62
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 62
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 61
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 60
Behavioral Modeling of GaN FETs: a Load-Line Approach 60
Thermal characterization of high-power GaN HEMTs up to 65 GHz 60
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 58
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 58
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 58
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 58
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 58
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 58
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 57
Class-A power amplifier design technique based on electron device low-frequency characterization 57
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 56
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 56
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 56
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 56
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 55
Waveform engineering: State-of-the-art and future trends (invited paper) 55
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 54
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 54
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 54
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 54
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 54
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 53
A procedure for the extraction of a nonlinear microwave GaN FET model 53
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 52
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 52
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 52
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 51
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 51
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 51
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 51
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 51
Current-gain in FETs beyond cut-off frequency 50
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 50
Empowering GaN HEMT models: The gateway for power amplifier design 50
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 50
GaN power amplifier design exploiting wideband large-signal matching 49
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 49
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 49
Power Amplifier Design Accounting for Input Large-Signal Matching 48
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 48
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 48
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 48
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 48
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 47
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 47
75-VDC GaN technology investigation from a degradation perspective 46
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 45
Linear versus nonlinear de-embedding: Experimental investigation 45
Nonlinear Embedding and De-embedding: Theory and Applications 45
“Hybrid” Approach to Microwave Power Amplifier Design 44
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 44
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 44
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 43
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 43
A new approach to Class-E power amplifier design 43
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 42
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 42
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 41
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 40
Extremely Low-Frequency Measurements Using an Active Bias Tee 40
Microwave FET model identification based on vector intermodulation measurements 40
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 39
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 38
A new description of fast charge-trapping effects in GaN FETs 38
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 38
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 36
Nonlinear model for 40-GHz cold-FET operation 36
Evaluation of FET performance and restrictions by low-frequency measurements 35
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 34
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 34
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 32
Totale 5.522
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Categoria #
all - tutte 38.115
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 38.115
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20252.995 137 433 94 113 217 40 129 108 264 550 300 610
2025/2026188 188 0 0 0 0 0 0 0 0 0 0 0
Totale 5.552