Bicocca Open Archive

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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
AS - Asia 3.101
NA - Nord America 2.150
EU - Europa 2.020
SA - Sud America 513
AF - Africa 42
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 3
Totale 7.834
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Nazione #
US - Stati Uniti d'America 2.079
SG - Singapore 1.148
HK - Hong Kong 716
CN - Cina 691
RU - Federazione Russa 679
BR - Brasile 426
IE - Irlanda 320
IT - Italia 312
SE - Svezia 266
VN - Vietnam 249
DE - Germania 226
KR - Corea 75
GB - Regno Unito 47
IN - India 47
CA - Canada 43
AR - Argentina 39
ID - Indonesia 29
UA - Ucraina 29
AT - Austria 24
BD - Bangladesh 24
PL - Polonia 24
JP - Giappone 22
NL - Olanda 22
MX - Messico 17
VE - Venezuela 17
IQ - Iraq 15
TR - Turchia 15
ZA - Sudafrica 14
EC - Ecuador 13
TW - Taiwan 13
CH - Svizzera 12
ES - Italia 12
PK - Pakistan 11
FI - Finlandia 10
KE - Kenya 10
FR - Francia 8
SA - Arabia Saudita 8
PY - Paraguay 7
BG - Bulgaria 6
DZ - Algeria 6
LT - Lituania 6
MY - Malesia 6
AU - Australia 5
CO - Colombia 5
MA - Marocco 5
PH - Filippine 5
UZ - Uzbekistan 5
AE - Emirati Arabi Uniti 4
AL - Albania 4
CZ - Repubblica Ceca 4
UY - Uruguay 4
AM - Armenia 3
DO - Repubblica Dominicana 3
IR - Iran 3
JM - Giamaica 3
TN - Tunisia 3
AZ - Azerbaigian 2
CR - Costa Rica 2
EG - Egitto 2
EU - Europa 2
NP - Nepal 2
RO - Romania 2
SI - Slovenia 2
BY - Bielorussia 1
CG - Congo 1
CL - Cile 1
CY - Cipro 1
DK - Danimarca 1
ET - Etiopia 1
GE - Georgia 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
IL - Israele 1
JO - Giordania 1
KZ - Kazakistan 1
LB - Libano 1
LC - Santa Lucia 1
NI - Nicaragua 1
OM - Oman 1
PE - Perù 1
PT - Portogallo 1
SX - ???statistics.table.value.countryCode.SX??? 1
TH - Thailandia 1
Totale 7.834
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Città #
Hong Kong 716
Singapore 641
Dublin 303
New York 218
Ashburn 202
Santa Clara 190
Frankfurt am Main 161
Hefei 152
Beijing 150
Milan 131
Chandler 100
Princeton 100
Ho Chi Minh City 87
Dallas 86
Moscow 76
Los Angeles 74
Seoul 70
Hanoi 56
Lawrence 48
The Dalles 48
Shanghai 41
São Paulo 39
Fairfield 35
Buffalo 31
Chicago 31
Altamura 26
Ann Arbor 25
Ferrara 24
Guangzhou 22
Jakarta 22
Nuremberg 20
Warsaw 20
Tokyo 19
Andover 18
Montreal 18
Brasília 17
Rome 17
Bologna 16
Wilmington 16
San Diego 15
Toronto 15
Brooklyn 14
London 14
Woodbridge 14
Cambridge 13
Rio de Janeiro 13
Seattle 13
Denver 11
Haiphong 11
Houston 10
Orem 10
Salt Lake City 10
San Giuseppe Vesuviano 10
Vienna 10
Da Nang 9
Kent 9
Lappeenranta 9
Munich 9
Nairobi 9
Pune 9
Shenzhen 9
Belo Horizonte 8
Guarulhos 8
Taipei 8
Chennai 7
Falls Church 7
Phoenix 7
San Francisco 7
Xi'an 7
Atlanta 6
Biên Hòa 6
Boston 6
Changsha 6
Curitiba 6
Dhaka 6
Kardzhali 6
Miami 6
Salvador 6
Stockholm 6
Washington 6
Zurich 6
Akola 5
Basra 5
Guayaquil 5
Ha Long 5
Hangzhou 5
Lancaster 5
Manchester 5
Ninh Bình 5
Peschiera Borromeo 5
Secaucus 5
Tongchuanshi 5
Viamão 5
Amsterdam 4
Ankara 4
Bắc Giang 4
Council Bluffs 4
Elk Grove Village 4
Fuzhou 4
Huskvarna 4
Totale 4.531
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Nome #
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 221
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 170
X-Band GaN Power Amplifier for Future Generation SAR Systems 134
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 131
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 125
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 123
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 122
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 121
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 119
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 119
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 117
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 113
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 112
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 110
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 107
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 102
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 102
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 100
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 100
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 100
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 95
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 92
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 89
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 88
Scalability of Multifinger HEMT Performance 88
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 88
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 87
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 86
Extended operation of class-F power amplifiers using input waveform engineering 86
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 84
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 84
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 83
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 82
GaN HEMT model extraction based on dynamic-bias measurements 82
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 81
On the evaluation of the high-frequency load line in active devices 80
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 78
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 78
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 77
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 77
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 77
Behavioral Modeling of GaN FETs: a Load-Line Approach 77
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 77
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 77
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 76
Class-A power amplifier design technique based on electron device low-frequency characterization 76
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 75
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 74
Thermal characterization of high-power GaN HEMTs up to 65 GHz 74
Empowering GaN HEMT models: The gateway for power amplifier design 73
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 73
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 73
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 73
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 71
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 71
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 71
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 70
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 70
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 70
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 69
Nonlinear Embedding and De-embedding: Theory and Applications 69
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 67
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 67
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 66
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 66
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 65
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 65
Power Amplifier Design Accounting for Input Large-Signal Matching 65
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 65
GaN power amplifier design exploiting wideband large-signal matching 64
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 64
Waveform engineering: State-of-the-art and future trends (invited paper) 64
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 63
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 63
A procedure for the extraction of a nonlinear microwave GaN FET model 62
75-VDC GaN technology investigation from a degradation perspective 62
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 61
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 61
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 61
Linear versus nonlinear de-embedding: Experimental investigation 60
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 60
A new approach to Class-E power amplifier design 60
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 60
Current-gain in FETs beyond cut-off frequency 59
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 59
“Hybrid” Approach to Microwave Power Amplifier Design 58
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 58
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 57
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 57
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 56
Extremely Low-Frequency Measurements Using an Active Bias Tee 55
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 55
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 54
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 54
A new description of fast charge-trapping effects in GaN FETs 54
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 53
Microwave FET model identification based on vector intermodulation measurements 52
Evaluation of FET performance and restrictions by low-frequency measurements 49
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 49
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 48
Totale 7.987
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Categoria #
all - tutte 46.005
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 46.005
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20252.995 137 433 94 113 217 40 129 108 264 550 300 610
2025/20262.762 583 497 389 666 571 56 0 0 0 0 0 0
Totale 8.126