A nonlinear multi-bias model oriented to accurately predict the effects of charge-trapping in Gallium Nitride (GaN) HEMTs is proposed. As a case study, we considered a 0.25-μm 8×75-μm GaN HEMT. The model is identified by using CW low-frequency time-domain data and validated through high-frequency vector nonlinear measurements.
Bosi, G., Raffo, A., Vadala', V., Vannini, G. (2015). A new description of fast charge-trapping effects in GaN FETs. In 2015 IEEE MTT-S International Microwave Symposium, IMS 2015 (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/MWSYM.2015.7166857].
A new description of fast charge-trapping effects in GaN FETs
BOSI, Gianni;VADALA', Valeria;
2015
Abstract
A nonlinear multi-bias model oriented to accurately predict the effects of charge-trapping in Gallium Nitride (GaN) HEMTs is proposed. As a case study, we considered a 0.25-μm 8×75-μm GaN HEMT. The model is identified by using CW low-frequency time-domain data and validated through high-frequency vector nonlinear measurements.
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