VADALÀ, VALERIA
VADALÀ, VALERIA
DIPARTIMENTO DI FISICA "GIUSEPPE OCCHIALINI"
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs
2008 Raffo, A; Vadala', V; Traverso, P; Santarelli, A; Vannini, G; Filicori, F
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state
2008 Raffo, A; Vadala', V; Vannini, G; Santarelli, A
Class-A power amplifier design technique based on electron device low-frequency characterization
2009 Raffo, A; Di Falco, S; Vadala', V; Scappaviva, F; Vannini, G
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology
2010 Avolio, G; Raffo, A; Schreurs, D; Vadala', V; Di Falco, S; Deraedt, W; Nauwelaers, B; Vannini, G
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design
2010 Raffo, A; Vadala', V; Schreurs, D; Crupi, G; Avolio, G; Caddemi, A; Vannini, G
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System
2010 Raffo, A; Di Falco, S; Vadala', V; Vannini, G
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours
2010 Vadalà, V; Raffo, A; Di Falco, S; Vannini, G
“Hybrid” Approach to Microwave Power Amplifier Design
2010 Raffo, A; Vadala', V; DI FALCO, S; Scappaviva, F; Vannini, G
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation
2010 Raffo, A; Di Falco, S; Vadalà, V; Vannini, G
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects
2011 Crupi, G; Raffo, A; Schreurs, D; Avolio, G; Vadalà, V; Di Falco, S; Caddemi, A; Vannini, G
On the evaluation of the high-frequency load line in active devices
2011 Raffo, A; Avolio, G; Schreurs, D; Di Falco, S; Vadala', V; Scappaviva, F; Crupi, G; Nauwelaers, B; Vannini, G
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design
2011 DI FALCO, S; Raffo, A; Vannini, G; Vadala', V
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects
2011 Crupi, G; Raffo, A; Schreurs, D; Avolio, G; Vadala', V; DI FALCO, S; Caddemi, A; Vannini, G
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design
2011 Vadala', V; Raffo, A; DI FALCO, S; Vannini, G
A new approach to Class-E power amplifier design
2011 Musio, A; Vadalà, V; Scappaviva, F; Raffo, A; Di Falco, S; Vannini, G
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices
2011 Raffo, A; Vadala', V; Traverso, P; Santarelli, A; Vannini, G; Filicori, F
Power Amplifier Design Accounting for Input Large-Signal Matching
2012 Di Falco, S; Raffo, A; Vadalà, V; Vannini, G
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design
2012 Vadala', V; Raffo, A; Bosi, G; Crupi, G; Vannini, G
GaN power amplifier design exploiting wideband large-signal matching
2012 Di Falco, S; Raffo, A; Resca, D; Scappaviva, F; Vadala', V; Vannini, G
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues
2012 Vadalà, V; Avolio, G; Bosi, G; Raffo, A; Schreurs, D; Vannini, G