VADALÀ, VALERIA
VADALÀ, VALERIA
DIPARTIMENTO DI FISICA "GIUSEPPE OCCHIALINI"
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing
2025 D'Aniello, F; Esposito, C; Bosi, G; De Matteis, M; Baschirotto, A; Vadalà, V
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design
2025 Saeed, I; Bosi, G; Esposito, C; D'Aniello, F; Charbon, E; Baschirotto, A; Vadalà, V
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology
2025 D'Aniello, F; Tettamanti, M; Shah, S; Mattiazzo, S; Bonaldo, S; Vadalà, V; Baschirotto, A
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers
2024 Kikuchi, K; Raffo, A; Vadalà, V; Bosi, G; Vannini, G; Yamamoto, H
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs
2024 Crupi, G; Vadala, V; Bosi, G; Gugliandolo, G; Bao, X; Giofre, R; Raffo, A; Colantonio, P; Donato, N; Vannini, G
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications
2024 Rao, G; Lenka, T; Vadalà, V; Nguyen, H
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach
2024 Raghuveera, E; Lenka, T; Rao, G; Vadalà, V; Nguyen, H
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics
2024 Rao, G; Lenka, T; Vadalà, V; Nguyen, H
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past
2024 Vadala, V; Raffo, A; Colzani, A; Fumagalli, M; Sivverini, G; Bosi, G; Vannini, G
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber
2024 Nanni, J; Saderi, G; Bellanca, G; Bosi, G; Raffo, A; Vadalà, V; Debernardi, P; Polleux, J; Billabert, A; Esfahani, M; Tartarini, G
Physics-informed neural network assisted automated design of power amplifier by user defined specifications
2024 Bhargava, G; Kumari, H; Vadalà, V; Majumdar, S; Crupi, G
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function
2023 Gugliandolo, G; Crupi, G; Vadalà, V; Raffo, A; Donato, N; Vannini, G
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation
2023 Bosi, G; Raffo, A; Vadalà, V; Giofrè, R; Crupi, G; Vannini, G
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters
2023 Resca, D; Bosi, G; Biondi, A; Cariani, L; Vadalà, V; Scappaviva, F; Raffo, A; Vannini, G
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT
2023 Vadalà, V; Raffo, A; Bosi, G; Giofre, R; Colantonio, P; Vannini, G
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation
2023 Bosi, G; Raffo, A; Giofre, R; Vadalà, V; Crupi, G; Colantonio, P; Vannini, G
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition
2023 Manni, F; Giofre, R; Giannini, F; Vadalà, V; Bosi, G; Raffo, A; Vannini, G; Colantonio, P
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition
2023 Gugliandolo, G; Crupi, G; Marinkovic, Z; Vadalà, V; Raffo, A; Donato, N; Vannini, G
150-nm GaN HEMT Degradation under Realistic Load-Line Operation
2022 Raffo, A; Vadalà, V; Bosi, G; Giofre, R; Vannini, G
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling
2022 Vadalà, V; Raffo, A; Bosi, G; Barsegyan, A; Custer, J; Formicone, G; Walker, J; Vannini, G