This paper presents the design of a Low-Noise Amplifier (LNA) in the 4 GHz - 6 GHz band developed in a commercial 12-nm FinFET technology, for cryogenic qubit readout circuitry. The LNA proposed in this work is a common source cascode amplifier with inductive degeneration on the source able to offer more than 18.8 dB of gain in the 4 GHz - 6 GHz band along with a noise figure of about 1.5 dB at room temperature and is, therefore, a good candidate for cryogenic applications where the noise is further attenuated.
D'Aniello, F., Esposito, C., Bosi, G., De Matteis, M., Baschirotto, A., Vadalà, V. (2025). A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing. In 2025 International Conference on IC Design and Technology (ICICDT) (pp.21-24). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11077989].
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing
D'Aniello, F;Esposito, C;Bosi, G;De Matteis, M;Baschirotto, A;Vadalà, V
2025
Abstract
This paper presents the design of a Low-Noise Amplifier (LNA) in the 4 GHz - 6 GHz band developed in a commercial 12-nm FinFET technology, for cryogenic qubit readout circuitry. The LNA proposed in this work is a common source cascode amplifier with inductive degeneration on the source able to offer more than 18.8 dB of gain in the 4 GHz - 6 GHz band along with a noise figure of about 1.5 dB at room temperature and is, therefore, a good candidate for cryogenic applications where the noise is further attenuated.
| File | Dimensione | Formato | |
|---|---|---|---|
|
DAniello-2025-ICICDT-preprint.pdf
Solo gestori archivio
Tipologia di allegato:
Submitted Version (Pre-print)
Licenza:
Tutti i diritti riservati
Dimensione
300.77 kB
Formato
Adobe PDF
|
300.77 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
