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BOSI, GIANNI

BOSI, GIANNI  

DIPARTIMENTO DI FISICA "GIUSEPPE OCCHIALINI"  

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Risultati 1 - 20 di 64 (tempo di esecuzione: 0.025 secondi).
Titolo Tipologia Data di pubblicazione Autori File
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 01 - Articolo su rivista 2024 Vadalà V.Bosi G. +
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach 01 - Articolo su rivista 2024 Bosi G. +
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 01 - Articolo su rivista 2024 Vadala V.Bosi G. +
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 02 - Intervento a convegno 2024 Bosi G.Vadala Valeria +
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements 01 - Articolo su rivista 2023 Bosi G. +
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 01 - Articolo su rivista 2023 Bosi G.Vadalà V. +
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 01 - Articolo su rivista 2023 Bosi G.Vadalà Valeria +
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 02 - Intervento a convegno 2023 Vadalà V.Bosi G. +
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 02 - Intervento a convegno 2023 Bosi G.Vadalà V. +
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 02 - Intervento a convegno 2023 Vadalà ValeriaBosi G. +
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 02 - Intervento a convegno 2023 Bosi, Gianni +
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 02 - Intervento a convegno 2023 Bosi G. +
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 02 - Intervento a convegno 2022 Vadalà V.Bosi G. +
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 02 - Intervento a convegno 2022 Vadalà ValeriaBosi G. +
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 01 - Articolo su rivista 2022 Bosi G.Vadalà Valeria +
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 01 - Articolo su rivista 2022 Vadalà ValeriaBosi G. +
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 02 - Intervento a convegno 2022 Bosi G.Vadalà Valeria +
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 02 - Intervento a convegno 2022 Bosi G.Vadalà V. +
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 02 - Intervento a convegno 2022 Vadalà ValeriaBosi G. +
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 02 - Intervento a convegno 2021 Vadalà Valeria.Bosi G. +