BOSI, GIANNI
BOSI, GIANNI
DIPARTIMENTO DI FISICA "GIUSEPPE OCCHIALINI"
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing
2025 D'Aniello, F; Esposito, C; Bosi, G; De Matteis, M; Baschirotto, A; Vadalà, V
A waveform engineering approach for class F operation in a class C biased peaking branch of GaN MMIC Doherty power amplifiers
2025 Manni, F; Colantonio, P; Camarchia, V; Piacibello, A; Bosi, G; Vadalà, V; Giofrè, R
Characterization and Modeling of Dual-Input Doherty Power Amplifier for High Efficiency and Bandwidth
2025 Basaglia, G; Zhou, H; Bosi, G; Vadala, V; Raffo, A; Vannini, G; Fager, C
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology
2025 Choupan, N; Vadala, V; Bosi, G; Ramella, C; Grassi, M; Crupi, G; Giofre, R; Raffo, A; Vannini, G
Development of a GaAs Stacked Cells Based on Common-Gate Model Extraction Procedure
2025 Choupan, N; Vadala, V; Bosi, G; Pirola, M; Ramella, C
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design
2025 Saeed, I; Bosi, G; Esposito, C; D'Aniello, F; Charbon, E; Baschirotto, A; Vadalà, V
Rethinking Microwave Power-Bar Characterization
2025 Bosi, G; Raffo, A; Giofre, R; Vadala, V; Manni, F; Marante, R; Cabria, L; De Arriba, F; Colantonio, P; Vannini, G
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers
2024 Kikuchi, K; Raffo, A; Vadalà, V; Bosi, G; Vannini, G; Yamamoto, H
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach
2024 Zhu, Z; Bosi, G; Raffo, A; Crupi, G; Cai, J
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs
2024 Crupi, G; Vadala, V; Bosi, G; Gugliandolo, G; Bao, X; Giofre, R; Raffo, A; Colantonio, P; Donato, N; Vannini, G
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past
2024 Vadala, V; Raffo, A; Colzani, A; Fumagalli, M; Sivverini, G; Bosi, G; Vannini, G
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber
2024 Nanni, J; Saderi, G; Bellanca, G; Bosi, G; Raffo, A; Vadalà, V; Debernardi, P; Polleux, J; Billabert, A; Esfahani, M; Tartarini, G
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements
2023 Crupi, G; Latino, M; Gugliandolo, G; Marinkovic, Z; Cai, J; Bosi, G; Raffo, A; Fazio, E; Donato, N
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation
2023 Bosi, G; Raffo, A; Vadalà, V; Giofrè, R; Crupi, G; Vannini, G
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters
2023 Resca, D; Bosi, G; Biondi, A; Cariani, L; Vadalà, V; Scappaviva, F; Raffo, A; Vannini, G
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT
2023 Vadalà, V; Raffo, A; Bosi, G; Giofre, R; Colantonio, P; Vannini, G
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation
2023 Bosi, G; Raffo, A; Giofre, R; Vadalà, V; Crupi, G; Colantonio, P; Vannini, G
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition
2023 Manni, F; Giofre, R; Giannini, F; Vadalà, V; Bosi, G; Raffo, A; Vannini, G; Colantonio, P
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks
2023 Cai, J; Gugliandolo, G; Marinković, Z; Latino, M; Fazio, E; Bosi, G; Raffo, A; Crupi, G; Donato, N
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT
2023 Marinkovic, Z; Cai, J; Gugliandolo, G; Latino, M; Fazio, E; Bosi, G; Raffo, A; Crupi, G; Donato, N