In this article, a non-quasi-static (NQS) nonlinear transistor model oriented to -band power amplifier (PA) design is discussed. A new formulation that describes the millimeter-wave NQS behavior is proposed and the entire model extraction procedure is detailed with the aim of putting in evidence the specific issues posed by working at millimeter-wave frequencies. The model is used in the design of a family of monolithic microwave integrated circuit (MMICs) for realizing complete system-in-package (SIP) transmitter and receiver. The model is first fully validated at transistor level by comparing its predictions with linear and nonlinear measurements, and then with measurements carried out on the realized MMIC amplifiers at -band.

Vadala, V., Raffo, A., Colzani, A., Fumagalli, M., Sivverini, G., Bosi, G., et al. (2024). On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 72(9), 5039-5050 [10.1109/TMTT.2024.3378597].

On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past

Vadala V.;Bosi G.;
2024

Abstract

In this article, a non-quasi-static (NQS) nonlinear transistor model oriented to -band power amplifier (PA) design is discussed. A new formulation that describes the millimeter-wave NQS behavior is proposed and the entire model extraction procedure is detailed with the aim of putting in evidence the specific issues posed by working at millimeter-wave frequencies. The model is used in the design of a family of monolithic microwave integrated circuit (MMICs) for realizing complete system-in-package (SIP) transmitter and receiver. The model is first fully validated at transistor level by comparing its predictions with linear and nonlinear measurements, and then with measurements carried out on the realized MMIC amplifiers at -band.
Articolo in rivista - Articolo scientifico
Computational modeling; Foundries; Frequency measurement; Integrated circuit modeling; Microwave amplifiers; microwave FETs; Millimeter wave technology; Millimeter wave transistors; millimeter-waves; nonlinear transistor modeling; small-and large-signal microwave measurements; Solid modeling;
English
1-apr-2024
2024
72
9
5039
5050
open
Vadala, V., Raffo, A., Colzani, A., Fumagalli, M., Sivverini, G., Bosi, G., et al. (2024). On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 72(9), 5039-5050 [10.1109/TMTT.2024.3378597].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/498340
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