Recently a GaN HEMT small-signal model based on gated recurrent unit (GRU) neural networks has been proposed and it has been proved that a very good accuracy can be achieved by using the developed modeling approach. However, as the GRU networks are recurrent networks, meaning that the previous states contribute to the current output, the aim of the work is to test and validate the behavior of the GaN HEMT model depending on the input order and history in order to derive the corresponding outcomes and to gain a better understanding of the inherent features of the developed modeling strategy.

Marinkovic, Z., Cai, J., Gugliandolo, G., Latino, M., Fazio, E., Bosi, G., et al. (2023). Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT. In 2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023 (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/MIEL58498.2023.10315817].

Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT

Bosi G.;
2023

Abstract

Recently a GaN HEMT small-signal model based on gated recurrent unit (GRU) neural networks has been proposed and it has been proved that a very good accuracy can be achieved by using the developed modeling approach. However, as the GRU networks are recurrent networks, meaning that the previous states contribute to the current output, the aim of the work is to test and validate the behavior of the GaN HEMT model depending on the input order and history in order to derive the corresponding outcomes and to gain a better understanding of the inherent features of the developed modeling strategy.
paper
Gallium nitride; Millimeter waves; Recurrent neural networks
English
33rd IEEE International Conference on Microelectronics, MIEL 2023
2023
2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023
9798350347760
2023
1
4
none
Marinkovic, Z., Cai, J., Gugliandolo, G., Latino, M., Fazio, E., Bosi, G., et al. (2023). Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT. In 2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023 (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/MIEL58498.2023.10315817].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/522061
Citazioni
  • Scopus 0
  • ???jsp.display-item.citation.isi??? ND
Social impact