In this paper, we present a method for characterizing and analysing GaN-based FET devices. The measurement technique, named Dynamic Bias, is presented here using its oscilloscope-based implementation. Some practical issues in implementing such a measurement technique with an oscilloscope will be discussed, and solutions to overcome these problems will be presented. The analysis is carried out using both simulations and measurements. Experimental results are shown for a 0.15 \mu m GaN HEMT device with 300-\mu m periphery.
Vadalà, V., Raffo, A., Bosi, G., Giofre, R., Colantonio, P., Vannini, G. (2023). An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT. In European Microwave Week 2023 Conference Proceedings (pp.394-397). IEEE [10.23919/EuMIC58042.2023.10288823].
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT
Vadalà V.
Primo
;
2023
Abstract
In this paper, we present a method for characterizing and analysing GaN-based FET devices. The measurement technique, named Dynamic Bias, is presented here using its oscilloscope-based implementation. Some practical issues in implementing such a measurement technique with an oscilloscope will be discussed, and solutions to overcome these problems will be presented. The analysis is carried out using both simulations and measurements. Experimental results are shown for a 0.15 \mu m GaN HEMT device with 300-\mu m periphery.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
