In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.

Vadalà, V., Raffo, A., Bosi, G., Barsegyan, A., Custer, J., Formicone, G., et al. (2022). 200-W GaN PA Design Based on Accurate Multicell Transistor Modeling. In IEEE MTT-S International Microwave Symposium Digest (pp.378-381). 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE [10.1109/IMS37962.2022.9865457].

200-W GaN PA Design Based on Accurate Multicell Transistor Modeling

Vadalà Valeria
;
Bosi G.;
2022

Abstract

In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.
paper
microwave FET; nonlinear transistor modeling; power amplifiers;
English
IEEE/MTT-S International Microwave Symposium, IMS 2022 - 19 June 2022 through 24 June 2022
2022
IEEE MTT-S International Microwave Symposium Digest
9781665496131
2022
2022-June
378
381
9865457
https://ieeexplore.ieee.org/document/9865457
none
Vadalà, V., Raffo, A., Bosi, G., Barsegyan, A., Custer, J., Formicone, G., et al. (2022). 200-W GaN PA Design Based on Accurate Multicell Transistor Modeling. In IEEE MTT-S International Microwave Symposium Digest (pp.378-381). 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE [10.1109/IMS37962.2022.9865457].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/397078
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