In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.
Vadalà, V., Raffo, A., Bosi, G., Barsegyan, A., Custer, J., Formicone, G., et al. (2022). 200-W GaN PA Design Based on Accurate Multicell Transistor Modeling. In IEEE MTT-S International Microwave Symposium Digest (pp.378-381). 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE [10.1109/IMS37962.2022.9865457].
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling
Vadalà Valeria
;Bosi G.;
2022
Abstract
In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.
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