This study is aimed at investigating the performance of an advanced GaN HEMT technology for millimeter-wave applications. Both DC and frequency-dependent measurements are performed on three multifinger on-wafer 0.15-µm transistors with different gate widths at different ambient temperatures for foreseeing GaN technology capability when applications require challenging frequency operation.
Vadalà, V., Crupi, G., Giofre, R., Bosi, G., Raffo, A., Vannini, G. (2022). mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis. In Mediterranean Microwave Symposium (pp.1-6). IEEE Computer Society [10.1109/MMS55062.2022.9825553].
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis
Vadalà Valeria
;Bosi G.;
2022
Abstract
This study is aimed at investigating the performance of an advanced GaN HEMT technology for millimeter-wave applications. Both DC and frequency-dependent measurements are performed on three multifinger on-wafer 0.15-µm transistors with different gate widths at different ambient temperatures for foreseeing GaN technology capability when applications require challenging frequency operation.
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