In this paper we propose a new empirical formulation for modelling the DC drain-current behaviour of CMOS technology devices for RF applications oriented to quantum computing integrated circuits. The approach is based on the well-known Angelov's model, that has been properly modified to include the capability of reproducing the transistor DC I-V characteristics from ambient down to cryogenic temperature. The approach has been successfully applied to 16-nm FinFET technology, showing very good performance in terms of model accuracy.
Saeed, I., Bosi, G., Esposito, C., D'Aniello, F., Charbon, E., Baschirotto, A., et al. (2025). Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design. In 2025 International Conference on IC Design and Technology (ICICDT) (pp.17-20). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11078117].
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design
Saeed, I;Bosi, G;Esposito, C;D'Aniello, F;Baschirotto, A;Vadalà, V
2025
Abstract
In this paper we propose a new empirical formulation for modelling the DC drain-current behaviour of CMOS technology devices for RF applications oriented to quantum computing integrated circuits. The approach is based on the well-known Angelov's model, that has been properly modified to include the capability of reproducing the transistor DC I-V characteristics from ambient down to cryogenic temperature. The approach has been successfully applied to 16-nm FinFET technology, showing very good performance in terms of model accuracy.
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