In this paper, the experimental characterization of low-frequency dispersion (i.e., long-term memory effects) affecting microwave GaN HEMTs is carried out by adopting a new nonlinear measurement system, which is based on low-frequency multiharmonic signal sources. The proposed setup, which has been fully automated by a control software procedure, enables given source/load device terminations at fundamental and harmonic frequencies to be synthesized. Different experimental results are provided to characterize well-known effects related to low-frequency dispersion (e.g., knee walkout and drain current collapse) and to demonstrate the validity of assumptions commonly adopted for electron device modeling.
Raffo, A., Di Falco, S., Vadala', V., Vannini, G. (2010). Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 58(9), 2490-2496 [10.1109/TMTT.2010.2058934].
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System
Vadala', V;
2010
Abstract
In this paper, the experimental characterization of low-frequency dispersion (i.e., long-term memory effects) affecting microwave GaN HEMTs is carried out by adopting a new nonlinear measurement system, which is based on low-frequency multiharmonic signal sources. The proposed setup, which has been fully automated by a control software procedure, enables given source/load device terminations at fundamental and harmonic frequencies to be synthesized. Different experimental results are provided to characterize well-known effects related to low-frequency dispersion (e.g., knee walkout and drain current collapse) and to demonstrate the validity of assumptions commonly adopted for electron device modeling.
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