This paper describes a measurement technique suitable for the characterization of GaN-based FET devices, based on exciting the device simultaneously with low-frequency large-signal and high-frequency small-signal tones. This technique allows one to accurately characterize lowfrequency dispersion affecting this technology and at the same time the high-frequency behavior. We also discuss how to effectively use these measurements for modeling purpose.
Vadala, V., Vannini, G. (2020). Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation. In 2020 33rd General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2020 (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.23919/URSIGASS49373.2020.9232254].
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation
Vadala Valeria;
2020
Abstract
This paper describes a measurement technique suitable for the characterization of GaN-based FET devices, based on exciting the device simultaneously with low-frequency large-signal and high-frequency small-signal tones. This technique allows one to accurately characterize lowfrequency dispersion affecting this technology and at the same time the high-frequency behavior. We also discuss how to effectively use these measurements for modeling purpose.
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