The manuscript presents a load-pull characterization technique for the design of power amplifiers in the millimeter-wave frequency band. The proposed approach is based on a recently proposed characterization technique which, by exploiting direct low-frequency nonlinear electron device measurements in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves a similar level of accuracy provided by expensive nonlinear measurement setups operating at microwave frequencies. The proposed characterization technique, validated by means of measurements carried out at 20 GHz on a 0.15-μm GaAs pHEMT device, has been exploited for the first time in order to draw load-pull contours up to 60 GHz.
Vadalà, V., Raffo, A., Bosi, G., Crupi, G., Vannini, G. (2012). Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design. In 79th ARFTG Microwave Measurement Conference: Non-Linear Measurement Systems, ARFTG 2012 (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/ARFTG79.2012.6291176].
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design
Vadalà, V
;Bosi, G;
2012
Abstract
The manuscript presents a load-pull characterization technique for the design of power amplifiers in the millimeter-wave frequency band. The proposed approach is based on a recently proposed characterization technique which, by exploiting direct low-frequency nonlinear electron device measurements in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves a similar level of accuracy provided by expensive nonlinear measurement setups operating at microwave frequencies. The proposed characterization technique, validated by means of measurements carried out at 20 GHz on a 0.15-μm GaAs pHEMT device, has been exploited for the first time in order to draw load-pull contours up to 60 GHz.
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