This work focuses on the equivalent-circuit modeling of microwave field-effect transistors. Although the purely direct approach allows obtaining a good prediction accuracy in a straightforward way without the need of any optimization, optimization algorithms are often used to achieve an improved accuracy at the cost of a higher modeling complexity. The pros and cons of empowering the direct approach with optimization algorithms are discussed by focusing the analysis on a 1000-μm periphery gallium nitride high-electron-mobility transistor on silicon carbide substrate. The comparison between the two different approaches is performed through an extensive analysis of the frequency-dependent behavior of the small-signal characteristics.

Jarndal, A., Crupi, G., Alim, M., Vadalà, V., Raffo, A., Vannini, G. (2022). Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 35(5 (September/October 2022)), 1-11 [10.1002/jnm.3008].

Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches

Vadalà, V;
2022

Abstract

This work focuses on the equivalent-circuit modeling of microwave field-effect transistors. Although the purely direct approach allows obtaining a good prediction accuracy in a straightforward way without the need of any optimization, optimization algorithms are often used to achieve an improved accuracy at the cost of a higher modeling complexity. The pros and cons of empowering the direct approach with optimization algorithms are discussed by focusing the analysis on a 1000-μm periphery gallium nitride high-electron-mobility transistor on silicon carbide substrate. The comparison between the two different approaches is performed through an extensive analysis of the frequency-dependent behavior of the small-signal characteristics.
Articolo in rivista - Articolo scientifico
electron device; equivalent circuit; gallium nitride; non-quasi-static effects; optimization; scattering parameter measurements;
English
1
11
11
Jarndal, A., Crupi, G., Alim, M., Vadalà, V., Raffo, A., Vannini, G. (2022). Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 35(5 (September/October 2022)), 1-11 [10.1002/jnm.3008].
Jarndal, A; Crupi, G; Alim, M; Vadalà, V; Raffo, A; Vannini, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/390832
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