We compared two approaches to use high-frequency transistor load-pull data directly into a circuit simulator. One approach is based on Artificial Neural Networks (ANN), the other on look-up tables (LUT). We discuss some practical aspects, including implementation in the CAD environment and extrapolation capability.
Avolio, G., Raffo, A., Marchetti, M., Bosi, G., Vadalà, V., Vannini, G. (2019). GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study. In 2019 14th European Microwave Integrated Circuits Conference (EuMIC) (pp.80-83). Institute of Electrical and Electronics Engineers Inc. [10.23919/EuMIC.2019.8909451].
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study
G. Bosi;V. Vadalà;
2019
Abstract
We compared two approaches to use high-frequency transistor load-pull data directly into a circuit simulator. One approach is based on Artificial Neural Networks (ANN), the other on look-up tables (LUT). We discuss some practical aspects, including implementation in the CAD environment and extrapolation capability.
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