The paper presents a low-cost technique for nonlinear characterization of active devices oriented to microwave power amplifier design. The approach is based on a recently proposed measurement technique which, by exploiting a direct low-frequency nonlinear electron device characterization in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves a similar level of accuracy provided by expensive nonlinear measurement setups operating at microwave frequencies. Different experiments on a power GaN FET have been carried out in a wide range of frequency to demonstrate the validity of the described technique.

Vadala', V., Raffo, A., DI FALCO, S., Vannini, G. (2011). GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design. In European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 (pp.9-12). EuMA.

GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design

VADALA', Valeria;
2011

Abstract

The paper presents a low-cost technique for nonlinear characterization of active devices oriented to microwave power amplifier design. The approach is based on a recently proposed measurement technique which, by exploiting a direct low-frequency nonlinear electron device characterization in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves a similar level of accuracy provided by expensive nonlinear measurement setups operating at microwave frequencies. Different experiments on a power GaN FET have been carried out in a wide range of frequency to demonstrate the validity of the described technique.
paper
FET; Integrated circuit measurements; Load-Pull; Microwave amplifier; Semiconductor device measurements;
English
14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - 10 October 2011 through 11 October 2011
2011
European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
978-287487023-1
2011
9
12
6102824
https://ieeexplore.ieee.org/document/6102824
none
Vadala', V., Raffo, A., DI FALCO, S., Vannini, G. (2011). GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design. In European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 (pp.9-12). EuMA.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/380644
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