In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes.

Bosi, G., Raffo, A., Vadala', V., Trevisan, F., Vannini, G., Cengiz, O., et al. (2016). Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp.41-44). Institute of Electrical and Electronics Engineers Inc. [10.1109/EuMIC.2016.7777484].

Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance

VADALA', Valeria;
2016

Abstract

In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes.
Si
paper
GaN; HEMT; measurements; semiconductor devices;
English
11th European Microwave Integrated Circuits Conference, EuMIC 2016 - 3 October 2016 through 4 October 2016
978-287487044-6
https://ieeexplore.ieee.org/document/7777484
Bosi, G., Raffo, A., Vadala', V., Trevisan, F., Vannini, G., Cengiz, O., et al. (2016). Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp.41-44). Institute of Electrical and Electronics Engineers Inc. [10.1109/EuMIC.2016.7777484].
Bosi, G; Raffo, A; Vadala', V; Trevisan, F; Vannini, G; Cengiz, O; Sen, O; Ozbay, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/380656
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