This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is quite general and includes as particular cases different models proposed in the literature. A large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.
Raffo, A., Vadala', V., Schreurs, D., Crupi, G., Avolio, G., Caddemi, A., et al. (2010). Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 58(4), 710-718 [10.1109/TMTT.2010.2041572].
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design
Vadala', V;
2010
Abstract
This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is quite general and includes as particular cases different models proposed in the literature. A large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.
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