We present a measurement technique for the characterization of the degradation in microwave transistors. The time-domain setup operates in the megahertz range to set a realistic load-line for the device. Data on the degradation of a microwave transistor are reported.
Bosi, G., Vadala', V., Giofre, R., Raffo, A., Vannini, G. (2021). Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements. In 2021 34th General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2021 (pp.01-03). New York : Institute of Electrical and Electronics Engineers Inc. [10.23919/URSIGASS51995.2021.9560595].
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements
Bosi, G;Vadala', V;
2021
Abstract
We present a measurement technique for the characterization of the degradation in microwave transistors. The time-domain setup operates in the megahertz range to set a realistic load-line for the device. Data on the degradation of a microwave transistor are reported.
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