We present a measurement technique for the characterization of the degradation in microwave transistors. The time-domain setup operates in the megahertz range to set a realistic load-line for the device. Data on the degradation of a microwave transistor are reported.

Bosi, G., Vadala', V., Giofre, R., Raffo, A., Vannini, G. (2021). Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements. In 2021 34th General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2021 (pp.01-03). New York : Institute of Electrical and Electronics Engineers Inc. [10.23919/URSIGASS51995.2021.9560595].

Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements

Vadala', V;
2021

Abstract

We present a measurement technique for the characterization of the degradation in microwave transistors. The time-domain setup operates in the megahertz range to set a realistic load-line for the device. Data on the degradation of a microwave transistor are reported.
paper
FETs, GaN HEMTs, reliability, Semiconductor device measurements
English
34th General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2021
2021
2021 34th General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2021
978-9-4639-6-8027
2021
01
03
none
Bosi, G., Vadala', V., Giofre, R., Raffo, A., Vannini, G. (2021). Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements. In 2021 34th General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2021 (pp.01-03). New York : Institute of Electrical and Electronics Engineers Inc. [10.23919/URSIGASS51995.2021.9560595].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/345418
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