We extend the recently proposed dynamic-bias measurement technique to the identification of non-quasi-static FET models. In particular, we propose to exploit two high-frequency tickles superimposed on the low-frequency large-signal excitation. The tickle frequencies are chosen in order to separately extract the quasi-static and non-quasi-static model parameters. As case study, we extracted and validated the model of an GaAs pHEMT.
Raffo, A., Avolio, G., Vadala', V., Schreurs, D., Vannini, G. (2015). A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 25(12), 841-843 [10.1109/LMWC.2015.2496794].
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique
VADALA', Valeria;
2015
Abstract
We extend the recently proposed dynamic-bias measurement technique to the identification of non-quasi-static FET models. In particular, we propose to exploit two high-frequency tickles superimposed on the low-frequency large-signal excitation. The tickle frequencies are chosen in order to separately extract the quasi-static and non-quasi-static model parameters. As case study, we extracted and validated the model of an GaAs pHEMT.
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