New system architectures oriented to more and more challenging performance for the next generations of mobile devices demand for an accurate design of integrated circuits. The power amplifier is one of the most critical components in an RF system and the need for high performance has focused the designer attention to complex architectures, such as the Doherty power amplifier (DPA). In its most common implementations, the design requires transistor models showing high-accuracy levels under different classes of operation. In this work, we investigate the possibility of achieving the required level of accuracy for the transistor current-generator model using a set of measurements performed under the different classes of operation that mimic realistic device operation and use them for the model optimization. The developed approach is fully validated on a 28-GHz MMIC DPA, showing good agreement with the measured results.

Bosi, G., Raffo, A., Giofre, R., Vadala', V., Vannini, G., Limiti, E. (2021). Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design. In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference (pp.249-252). New York : Institute of Electrical and Electronics Engineers Inc. [10.1109/EuMIC48047.2021.00074].

Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design

Bosi, G;Vadala', V;
2021

Abstract

New system architectures oriented to more and more challenging performance for the next generations of mobile devices demand for an accurate design of integrated circuits. The power amplifier is one of the most critical components in an RF system and the need for high performance has focused the designer attention to complex architectures, such as the Doherty power amplifier (DPA). In its most common implementations, the design requires transistor models showing high-accuracy levels under different classes of operation. In this work, we investigate the possibility of achieving the required level of accuracy for the transistor current-generator model using a set of measurements performed under the different classes of operation that mimic realistic device operation and use them for the model optimization. The developed approach is fully validated on a 28-GHz MMIC DPA, showing good agreement with the measured results.
paper
Doherty power amplifiers; GaN-Si; HEMTs; nonlinear measurements; nonlinear modelling
English
15th European Microwave Integrated Circuits Conference, EuMIC 2020
2021
EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
978-2-87487-060-6
2021
249
252
9337381
https://ieeexplore.ieee.org/document/9337381
none
Bosi, G., Raffo, A., Giofre, R., Vadala', V., Vannini, G., Limiti, E. (2021). Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design. In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference (pp.249-252). New York : Institute of Electrical and Electronics Engineers Inc. [10.1109/EuMIC48047.2021.00074].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/345590
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