In this paper, a nonlinear model of a commercial 10-W laterally diffused metal oxide semiconductor (LDMOS) transistor for FM transmitters is identified. It is based on high-frequency small-signal measurements for the identification of both the parasitic network and the strictly nonlinear dynamic effects, whereas low-frequency large-signal measurements are exploited for the description of the dynamic I/V characteristics of the device above the cut-off of low-frequency dispersion. A validation of the proposed model is provided by using time-domain nonlinear measurements carried out at 40 MHz and 100 MHz.
Bosi, G., Crupi, G., Vadalà, V., Raffo, A., Giovannelli, A., Vannini, G. (2014). Nonlinear modeling of LDMOS transistors for high-power FM transmitters. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 27(5-6), 780-791 [10.1002/jnm.1939].
Nonlinear modeling of LDMOS transistors for high-power FM transmitters
Bosi, G
;Vadalà, V;
2014
Abstract
In this paper, a nonlinear model of a commercial 10-W laterally diffused metal oxide semiconductor (LDMOS) transistor for FM transmitters is identified. It is based on high-frequency small-signal measurements for the identification of both the parasitic network and the strictly nonlinear dynamic effects, whereas low-frequency large-signal measurements are exploited for the description of the dynamic I/V characteristics of the device above the cut-off of low-frequency dispersion. A validation of the proposed model is provided by using time-domain nonlinear measurements carried out at 40 MHz and 100 MHz.
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