In this paper a recently proposed identification procedure based on exciting the device under test simultaneously with low-frequency (LF) large-signal excitations and a high-frequency tickle tone, is applied for the first time to GaN transistors. It will be demonstrated that the proposed technique allows reaching good prediction capability even when challenging GaN technologies are considered where LF dispersion strongly affects the transistor behavior. A dedicated formulation for the drain-source current generator is used to correctly account for dispersive phenomena. As a case study a 0.25-μm GaN HEMT is considered. The extracted model has been validated through comparison with vector nonlinear measurements carried out at 10 GHz.
Vadala', V., Raffo, A., Vannini, G., Avolio, G., & Schreurs, D. (2014). GaN HEMT model extraction based on dynamic-bias measurements. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference (pp.206-209). Institute of Electrical and Electronics Engineers Inc. [10.1109/EuMIC.2014.6997828].