This study focuses on temperature dependent characterization of a 0.25x1500 µm2 GaN HEMT. The impact of the ambient temperature on the microwave performance is reported and discussed. It is achieved that the reduction of the average electron velocity with increasing temperature leads to a remarkably degradation of the main figures of merit.

Petrocchi, A., Crupi, G., Vadala', V., Avolio, G., Raffo, A., Schreurs, D., et al. (2017). Thermal characterization of high-power GaN HEMTs up to 65 GHz. In 2017 13th International Conference on Advanced Technologies, Systems and Services in Telecommunications, TELSIKS 2017 - Proceeding (pp.162-165). Institute of Electrical and Electronics Engineers Inc. [10.1109/TELSKS.2017.8246254].

Thermal characterization of high-power GaN HEMTs up to 65 GHz

Vadala', V;
2017

Abstract

This study focuses on temperature dependent characterization of a 0.25x1500 µm2 GaN HEMT. The impact of the ambient temperature on the microwave performance is reported and discussed. It is achieved that the reduction of the average electron velocity with increasing temperature leads to a remarkably degradation of the main figures of merit.
Si
paper
Figures of merit; GaN; HEMT; Microwave measurements; Temperature;
English
13th International Conference on Advanced Technologies, Systems and Services in Telecommunications, TELSIKS 2017 - 18 October 2017 through 20 October 2017
978-153861800-4
https://ieeexplore.ieee.org/document/8246254
Petrocchi, A., Crupi, G., Vadala', V., Avolio, G., Raffo, A., Schreurs, D., et al. (2017). Thermal characterization of high-power GaN HEMTs up to 65 GHz. In 2017 13th International Conference on Advanced Technologies, Systems and Services in Telecommunications, TELSIKS 2017 - Proceeding (pp.162-165). Institute of Electrical and Electronics Engineers Inc. [10.1109/TELSKS.2017.8246254].
Petrocchi, A; Crupi, G; Vadala', V; Avolio, G; Raffo, A; Schreurs, D; Caddemi, A; Vannini, G
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/380650
Citazioni
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 4
Social impact