In this paper, a new model formulation is presented that correctly accounts for low-frequency dispersion (i.e., trapping and thermal phenomena) affecting field-effect transistors (FETs). In particular, for the first time a behavioral description is applied only to the intrinsic current generator, enabling the correct measurement-based evaluation of the intrinsic device operation. The model, which is by construction technology independent, has been extensively validated considering a GaN FET. This choice is justified by the large interest around this technology and by the presence of dispersion effects that must be accurately accounted for.
Raffo, A., Bosi, G., Vadala', V., Vannini, G. (2014). Behavioral Modeling of GaN FETs: a Load-Line Approach. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 62(1), 73-82 [10.1109/TMTT.2013.2291710].
Behavioral Modeling of GaN FETs: a Load-Line Approach
BOSI, Gianni;VADALA', Valeria;
2014
Abstract
In this paper, a new model formulation is presented that correctly accounts for low-frequency dispersion (i.e., trapping and thermal phenomena) affecting field-effect transistors (FETs). In particular, for the first time a behavioral description is applied only to the intrinsic current generator, enabling the correct measurement-based evaluation of the intrinsic device operation. The model, which is by construction technology independent, has been extensively validated considering a GaN FET. This choice is justified by the large interest around this technology and by the presence of dispersion effects that must be accurately accounted for.
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