In this paper, a new model formulation is presented that correctly accounts for low-frequency dispersion (i.e., trapping and thermal phenomena) affecting field-effect transistors (FETs). In particular, for the first time a behavioral description is applied only to the intrinsic current generator, enabling the correct measurement-based evaluation of the intrinsic device operation. The model, which is by construction technology independent, has been extensively validated considering a GaN FET. This choice is justified by the large interest around this technology and by the presence of dispersion effects that must be accurately accounted for.

Raffo, A., Bosi, G., Vadala', V., Vannini, G. (2014). Behavioral Modeling of GaN FETs: a Load-Line Approach. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 62(1), 73-82 [10.1109/TMTT.2013.2291710].

Behavioral Modeling of GaN FETs: a Load-Line Approach

VADALA', Valeria;
2014

Abstract

In this paper, a new model formulation is presented that correctly accounts for low-frequency dispersion (i.e., trapping and thermal phenomena) affecting field-effect transistors (FETs). In particular, for the first time a behavioral description is applied only to the intrinsic current generator, enabling the correct measurement-based evaluation of the intrinsic device operation. The model, which is by construction technology independent, has been extensively validated considering a GaN FET. This choice is justified by the large interest around this technology and by the presence of dispersion effects that must be accurately accounted for.
Articolo in rivista - Articolo scientifico
FETs; GaN transistors; microwave amplifiers; semiconductor device modeling
English
73
82
10
Raffo, A., Bosi, G., Vadala', V., Vannini, G. (2014). Behavioral Modeling of GaN FETs: a Load-Line Approach. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 62(1), 73-82 [10.1109/TMTT.2013.2291710].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/343346
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