This paper describes the influence of gate-voltage clipping behavior on drain efficiency in case of class-F and inverse class-F operations under saturated regime. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for mathbfclass -mathbfF -1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT support our analytical results.

Yamamoto, H., Kikuchi, K., Norihiko, U., Inoue, K., Vadala, V., Bosi, G., et al. (2018). Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 (pp.44-47). Institute of Electrical and Electronics Engineers Inc. [10.1109/BCICTS.2018.8551045].

Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers

Vadala, Valeria;
2018

Abstract

This paper describes the influence of gate-voltage clipping behavior on drain efficiency in case of class-F and inverse class-F operations under saturated regime. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for mathbfclass -mathbfF -1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT support our analytical results.
paper
Harmonics; HEMTs; Microwave amplifiers; Waveform engineering; Electrical and Electronic Engineering; Instrumentation; Electronic
English
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
2018
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
978-153866502-2
2018
44
47
8551045
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=8536738
none
Yamamoto, H., Kikuchi, K., Norihiko, U., Inoue, K., Vadala, V., Bosi, G., et al. (2018). Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 (pp.44-47). Institute of Electrical and Electronics Engineers Inc. [10.1109/BCICTS.2018.8551045].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/343334
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