An active bias tee suitable for small- and large-signal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.

Nalli, A., Raffo, A., Avolio, G., Vadalà, V., Bosi, G., Schreurs, D., et al. (2013). Extremely Low-Frequency Measurements Using an Active Bias Tee. In IEEE MTT-S International Microwave Symposium Digest (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/MWSYM.2013.6697402].

Extremely Low-Frequency Measurements Using an Active Bias Tee

Vadalà, V;
2013

Abstract

An active bias tee suitable for small- and large-signal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.
paper
Bias tee; Semiconductor device measurements; Semiconductor device modeling; Thermal effects; Traps;
English
2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - 2 June 2013 through 7 June 2013
2013
IEEE MTT-S International Microwave Symposium Digest
9781467361767
2013
1
4
6697402
https://ieeexplore.ieee.org/document/6697402
none
Nalli, A., Raffo, A., Avolio, G., Vadalà, V., Bosi, G., Schreurs, D., et al. (2013). Extremely Low-Frequency Measurements Using an Active Bias Tee. In IEEE MTT-S International Microwave Symposium Digest (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/MWSYM.2013.6697402].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/398795
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