We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.
Avolio, G., Raffo, A., Angelov, I., Vadalà, V., Crupi, G., Caddemi, A., et al. (2014). Nonlinear model for 40-GHz cold-FET operation. In International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014 (pp.1-3). Institute of Electrical and Electronic Engineers Inc. [10.1109/INMMIC.2014.6815072].
Nonlinear model for 40-GHz cold-FET operation
Vadalà, V;
2014
Abstract
We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.
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