Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet accurate drain-lag model based on an industry standard large-signal model, i.e., the Chalmers (Angelov) model, extracted by means of pulsed S-parameter measurements, is presented. Instead of a complex nonlinear drain-lag description, only four constant parameters of the proposed drain-lag model need to be determined to accurately describe the large impacts of the drain-lag effects, e.g., drain-source current slump, typical kink observed in pulsed IV curves, and degradation of the output power. The extraction procedure of the parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. It is also shown that the model can very accurately predict the load pull performance over a wide range of drain bias voltages. Finally, the large-signal network analyzer measurements at low frequency are used to further verify the proposed drain-lag model in the prediction of the output current in time domain under large-signal condition.

Luo, P., Schnieder, F., Bengtsson, O., Vadalà, V., Raffo, A., Heinrich, W., et al. (2019). A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements. INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 11(2), 121-129 [10.1017/S1759078719000060].

A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

Vadalà, Valeria;
2019

Abstract

Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet accurate drain-lag model based on an industry standard large-signal model, i.e., the Chalmers (Angelov) model, extracted by means of pulsed S-parameter measurements, is presented. Instead of a complex nonlinear drain-lag description, only four constant parameters of the proposed drain-lag model need to be determined to accurately describe the large impacts of the drain-lag effects, e.g., drain-source current slump, typical kink observed in pulsed IV curves, and degradation of the output power. The extraction procedure of the parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. It is also shown that the model can very accurately predict the load pull performance over a wide range of drain bias voltages. Finally, the large-signal network analyzer measurements at low frequency are used to further verify the proposed drain-lag model in the prediction of the output current in time domain under large-signal condition.
Articolo in rivista - Articolo scientifico
Chalmers model; drain-lag effects; GaN HEMT modeling; pulsed S-parameter measurements; trapping effects
English
2019
11
2
121
129
reserved
Luo, P., Schnieder, F., Bengtsson, O., Vadalà, V., Raffo, A., Heinrich, W., et al. (2019). A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements. INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 11(2), 121-129 [10.1017/S1759078719000060].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/338968
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