A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state

It is well known that low-frequency dispersive effects cause important deviations between static (dc) and dynamic electron device currentvoltage (IV) characteristics, which must be accurately accounted for in nonlinear device models for microwave circuit design. As a matter of fact, a very high level of accuracy has been obtained by exploiting modeling approaches based on bias-dependent model parameters (e.g. stored into look-up tables). However, experimental characterization of these parameters is usually limited by the device safe operating area. Moreover, their practical use can be limited in the circuit design phase due to simulation time and memory occupation problems. On the other hand, too much simple models based on easy-to-compute analytical expressions do not satisfy the accuracy requirements usually needed for first-run-success MMIC design. In this paper, a new analytical model for the characterization of low-frequency dispersive effects is presented, whose aim is essentially related to the request of very accurate prediction capabilities yet preserving the numerical efficiency.