Gallium Nitride (GaN) transistors are increasingly attracting the attention of the microwave research community due to their performance in terms of power density and frequency capabilities. As a matter of fact, GaN is considered as the leading technology for future telecom and space applications. Nevertheless, nonlinear modelling of GaN transistors is still an open issue that continuously poses new challenges. In this paper, the comparison between two models, based on behavioural and analytical approaches, will be deeply discussed with the aim of pointing out advantages and disadvantages of each modelling technique.

Raffo, A., Bosi, G., Vadala', V., Vannini, G. (2015). Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches. In Telecommunication in Modern Satellite, Cable and Broadcasting Services (TELSIKS), 2015 12th International Conference on (pp.83-89). IEEE [10.1109/TELSKS.2015.7357743].

Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches

BOSI, Gianni;VADALA', Valeria;
2015

Abstract

Gallium Nitride (GaN) transistors are increasingly attracting the attention of the microwave research community due to their performance in terms of power density and frequency capabilities. As a matter of fact, GaN is considered as the leading technology for future telecom and space applications. Nevertheless, nonlinear modelling of GaN transistors is still an open issue that continuously poses new challenges. In this paper, the comparison between two models, based on behavioural and analytical approaches, will be deeply discussed with the aim of pointing out advantages and disadvantages of each modelling technique.
paper
FETs; GaN transistors; Nonlinear circuits; Nonlinear measurements; Semiconductor device modelling
English
International Conference on Telecommunication in Modern Satellite, Cable and Broadcasting Services (TELSIKS), 2015
2015
Telecommunication in Modern Satellite, Cable and Broadcasting Services (TELSIKS), 2015 12th International Conference on
978-1-4673-7516-0
2015
2015
83
89
7357743
none
Raffo, A., Bosi, G., Vadala', V., Vannini, G. (2015). Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches. In Telecommunication in Modern Satellite, Cable and Broadcasting Services (TELSIKS), 2015 12th International Conference on (pp.83-89). IEEE [10.1109/TELSKS.2015.7357743].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/390846
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