A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation Synthetic Aperture Radar systems is presented. The HPA delivers 14 W of output power, more than 38% of PAE in the frequency bandwidth from 8.8 to 10.4 GHz. Its linear gain is greater than 25 dB. For the first time an MMIC X-band HPA has been designed by directly measuring the transistor behavior at the current generator plane. In particular, optimum device load-line has been selected according to the chosen performance tradeoffs.

Resca, D., Raffo, A., Di Falco, S., Scappaviva, F., Vadala', V., Vannini, G. (2014). X-Band GaN Power Amplifier for Future Generation SAR Systems. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 24(4), 266-268 [10.1109/LMWC.2014.2299552].

X-Band GaN Power Amplifier for Future Generation SAR Systems

Vadala', V;
2014

Abstract

A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation Synthetic Aperture Radar systems is presented. The HPA delivers 14 W of output power, more than 38% of PAE in the frequency bandwidth from 8.8 to 10.4 GHz. Its linear gain is greater than 25 dB. For the first time an MMIC X-band HPA has been designed by directly measuring the transistor behavior at the current generator plane. In particular, optimum device load-line has been selected according to the chosen performance tradeoffs.
Articolo in rivista - Articolo scientifico
GaN; MMIC; X-band; Power Amplifiers
English
2014
24
4
266
268
6712907
none
Resca, D., Raffo, A., Di Falco, S., Scappaviva, F., Vadala', V., Vannini, G. (2014). X-Band GaN Power Amplifier for Future Generation SAR Systems. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 24(4), 266-268 [10.1109/LMWC.2014.2299552].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/343352
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