In this paper, a technique for the prediction of the optimum performance operation of GaN transistors is described. It is based on a small set of low-frequency measurements to acquire the I/V dynamic behavior of the device and a 'partial' model to consider the strictly nonlinear dynamic effects of the device. The technique is applied and validated on a 0.5-8×250-μm 2 GaN HEMT at 5.5 GHz.
Bosi, G., Raffo, A., Vadalà, V., Nalli, A., Vannini, G. (2013). Identification of the optimum operation for GaN HEMTs in high-power amplifiers. In SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings (pp.1-5). Institute of Electrical and Electronics Engineers Inc. [10.1109/IMOC.2013.6646425].
Identification of the optimum operation for GaN HEMTs in high-power amplifiers
Bosi, G;Vadalà, V;
2013
Abstract
In this paper, a technique for the prediction of the optimum performance operation of GaN transistors is described. It is based on a small set of low-frequency measurements to acquire the I/V dynamic behavior of the device and a 'partial' model to consider the strictly nonlinear dynamic effects of the device. The technique is applied and validated on a 0.5-8×250-μm 2 GaN HEMT at 5.5 GHz.
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