The manuscript presents a comparison between nonlinear and linear de-embedding procedures for the identification of the I/V dynamic characteristics at the transistor current-generator plane. These approaches, without the need for modeling device trapping and thermal effects, allow to retrieving the waveforms of the electrical quantities at the current generator that governs device performance in terms of output power and efficiency. It will be demonstrated that the accuracy of the selected procedure determines the accuracy of the obtained results. Simulations and measurements carried out on a 0.25 × 600 μm2 GaN HEMT are reported as case study.
Raffo, A., Vadalà, V., Avolio, G., Bosi, G., Nalli, A., Schreurs, D., et al. (2013). Linear versus nonlinear de-embedding: Experimental investigation. In 81st ARFTG Microwave Measurement Conference: Metrology for High Speed Circuits and Systems, ARFTG 2013 (pp.1-5). Institute of Electrical and Electronics Engineers Inc. [10.1109/ARFTG.2013.6579030].
Linear versus nonlinear de-embedding: Experimental investigation
Vadalà, V;Bosi, G;
2013
Abstract
The manuscript presents a comparison between nonlinear and linear de-embedding procedures for the identification of the I/V dynamic characteristics at the transistor current-generator plane. These approaches, without the need for modeling device trapping and thermal effects, allow to retrieving the waveforms of the electrical quantities at the current generator that governs device performance in terms of output power and efficiency. It will be demonstrated that the accuracy of the selected procedure determines the accuracy of the obtained results. Simulations and measurements carried out on a 0.25 × 600 μm2 GaN HEMT are reported as case study.
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