This contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-μm 10x100-μm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.
Raffo, A., Colantonio, P., Cipriani, E., Vadalà, V., Bosi, G., Martin Guerrero, T., et al. (2015). Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data. In International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015 (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/INMMIC.2015.7330351].
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data
Vadalà, V;Bosi, G;
2015
Abstract
This contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-μm 10x100-μm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.
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