This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together with the major RF figures of merit are thoroughly analyzed for seven HEMTs based on an interdigitated layout. The gate-width impact on the device performance is quantitatively and exhaustively estimated using a mathematical and systematical approach.
Crupi, G., Raffo, A., Vadalà, V., Vannini, G., Schreurs, D., Caddemi, A. (2020). Scalability of Multifinger HEMT Performance. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 30(9), 869-872 [10.1109/LMWC.2020.3012181].
Scalability of Multifinger HEMT Performance
Vadala Valeria;
2020
Abstract
This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together with the major RF figures of merit are thoroughly analyzed for seven HEMTs based on an interdigitated layout. The gate-width impact on the device performance is quantitatively and exhaustively estimated using a mathematical and systematical approach.
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