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BOSI, GIANNI
 Distribuzione geografica
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Continente #
AS - Asia 3.100
NA - Nord America 1.884
EU - Europa 1.333
SA - Sud America 535
AF - Africa 82
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 6.937
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Nazione #
US - Stati Uniti d'America 1.808
SG - Singapore 1.111
CN - Cina 529
HK - Hong Kong 486
RU - Federazione Russa 422
BR - Brasile 406
VN - Vietnam 396
IT - Italia 273
IE - Irlanda 149
KR - Corea 132
SE - Svezia 122
DE - Germania 106
IN - India 95
FR - Francia 65
BD - Bangladesh 55
AR - Argentina 52
GB - Regno Unito 47
IQ - Iraq 44
ID - Indonesia 42
CA - Canada 37
TR - Turchia 31
UA - Ucraina 31
PK - Pakistan 30
ZA - Sudafrica 25
PH - Filippine 24
MX - Messico 23
SA - Arabia Saudita 22
VE - Venezuela 21
EC - Ecuador 20
NL - Olanda 19
AT - Austria 18
TW - Taiwan 17
ES - Italia 16
JP - Giappone 16
PL - Polonia 14
UZ - Uzbekistan 14
KE - Kenya 12
CO - Colombia 11
MA - Marocco 11
FI - Finlandia 10
MY - Malesia 10
AL - Albania 9
CL - Cile 9
PY - Paraguay 9
AE - Emirati Arabi Uniti 8
EG - Egitto 8
JO - Giordania 8
CH - Svizzera 7
JM - Giamaica 7
CR - Costa Rica 6
DZ - Algeria 6
NP - Nepal 6
LT - Lituania 5
TN - Tunisia 5
UY - Uruguay 5
CZ - Repubblica Ceca 4
ET - Etiopia 4
KZ - Kazakistan 4
OM - Oman 4
AZ - Azerbaigian 3
BG - Bulgaria 3
DO - Repubblica Dominicana 3
AM - Armenia 2
GE - Georgia 2
IR - Iran 2
LB - Libano 2
PT - Portogallo 2
RO - Romania 2
RS - Serbia 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
AO - Angola 1
AU - Australia 1
BE - Belgio 1
BO - Bolivia 1
BW - Botswana 1
BY - Bielorussia 1
CG - Congo 1
CY - Cipro 1
DJ - Gibuti 1
EU - Europa 1
GA - Gabon 1
GR - Grecia 1
HR - Croazia 1
HU - Ungheria 1
LY - Libia 1
MZ - Mozambico 1
NA - Namibia 1
PE - Perù 1
PS - Palestinian Territory 1
SC - Seychelles 1
SN - Senegal 1
SX - ???statistics.table.value.countryCode.SX??? 1
TH - Thailandia 1
TZ - Tanzania 1
Totale 6.937
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Città #
Singapore 603
Hong Kong 480
San Jose 337
Ashburn 203
Hefei 149
Dublin 141
New York 126
Seoul 126
Ho Chi Minh City 118
Santa Clara 110
Hanoi 104
Milan 99
Beijing 96
Chicago 89
Dallas 86
Los Angeles 75
The Dalles 73
Lauterbourg 57
Frankfurt am Main 49
Moscow 44
São Paulo 44
Princeton 42
Ferrara 27
Bologna 24
Buffalo 24
Montreal 21
Jakarta 20
Lawrence 20
Nuremberg 20
Orem 20
Baghdad 19
Rome 18
Council Bluffs 17
Ann Arbor 16
Biên Hòa 16
Chandler 16
Da Nang 16
Taipei 15
Lahore 14
Tokyo 14
Brasília 13
Haiphong 13
Nairobi 12
Tashkent 12
Boston 11
Brooklyn 11
Guangzhou 11
Warsaw 11
Fairfield 10
Johannesburg 10
New Delhi 10
Pune 10
San Diego 10
San Giuseppe Vesuviano 10
Wilmington 10
Denver 9
Hải Dương 9
Phoenix 9
Amman 8
Bắc Ninh 8
Quito 8
Rio de Janeiro 8
Riyadh 8
Salt Lake City 8
Vienna 8
Andover 7
Belo Horizonte 7
Cambridge 7
Chennai 7
Delhi 7
Guarulhos 7
Houston 7
Jeddah 7
Lappeenranta 7
London 7
Manchester 7
Mumbai 7
Poplar 7
Salvador 7
Seattle 7
Shanghai 7
Ankara 6
Cairo 6
Can Tho 6
Dhaka 6
Guayaquil 6
Istanbul 6
Miami 6
Ninh Bình 6
Stockholm 6
Tirana 6
Toronto 6
Asunción 5
Atlanta 5
Basra 5
Buenos Aires 5
Elk Grove Village 5
Kent 5
Kuala Lumpur 5
Naples 5
Totale 4.053
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Nome #
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 179
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 177
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 175
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements 172
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 166
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 160
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 158
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach 157
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 155
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 154
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 153
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 152
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 150
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 142
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 138
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 132
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 129
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 123
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 122
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 120
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 115
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 113
Behavioral Modeling of GaN FETs: a Load-Line Approach 109
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 107
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 104
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 103
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 101
Extended operation of class-F power amplifiers using input waveform engineering 100
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 99
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 97
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 97
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 94
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 93
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 90
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 90
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 89
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 89
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 88
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 87
Linear versus nonlinear de-embedding: Experimental investigation 85
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 85
Gate waveform effects on high-efficiency PA design: An experimental validation 84
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 84
Microwave FET model identification based on vector intermodulation measurements 84
Impact of transistor model uncertainty on microwave load-pull simulations 83
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 83
A neural network approach for nonlinear modelling of LDMOSFETs 82
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 82
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 80
75-VDC GaN technology investigation from a degradation perspective 80
A GaN power amplifier for 100 VDC bus in GPS L-band 79
Waveform engineering: State-of-the-art and future trends (invited paper) 79
Maximizing the benefit of existing equipment for nonlinear and communication measurements 77
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 77
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 76
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 76
Extremely Low-Frequency Measurements Using an Active Bias Tee 75
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 75
A new description of fast charge-trapping effects in GaN FETs 74
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 73
Evaluation of FET performance and restrictions by low-frequency measurements 73
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 70
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 70
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 68
Non-linear look-up table modeling of GaAs HEMTs for mixer application 67
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 67
Rethinking Microwave Power-Bar Characterization 44
Development of a GaAs Stacked Cells Based on Common-Gate Model Extraction Procedure 39
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology 37
Characterization and Modeling of Dual-Input Doherty Power Amplifier for High Efficiency and Bandwidth 35
A waveform engineering approach for class F operation in a class C biased peaking branch of GaN MMIC Doherty power amplifiers 32
Totale 7.154
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Categoria #
all - tutte 30.724
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 30.724
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022202 0 0 0 0 0 0 81 16 3 1 17 84
2022/2023347 32 88 33 7 26 115 3 22 8 5 3 5
2023/2024446 12 5 5 22 70 132 81 10 58 7 5 39
2024/20251.899 72 204 44 127 156 29 104 81 139 327 169 447
2025/20264.260 424 418 316 602 368 212 667 319 463 420 51 0
Totale 7.154