Bicocca Open Archive

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BOSI, GIANNI
 Distribuzione geografica
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Continente #
AS - Asia 3.265
NA - Nord America 2.276
EU - Europa 1.655
SA - Sud America 535
AF - Africa 82
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 7.816
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Nazione #
US - Stati Uniti d'America 2.091
SG - Singapore 1.113
IT - Italia 595
CN - Cina 533
HK - Hong Kong 486
RU - Federazione Russa 422
BR - Brasile 406
VN - Vietnam 401
BD - Bangladesh 205
IE - Irlanda 149
CA - Canada 142
KR - Corea 132
SE - Svezia 122
DE - Germania 106
IN - India 97
FR - Francia 65
AR - Argentina 52
GB - Regno Unito 47
IQ - Iraq 44
ID - Indonesia 42
PK - Pakistan 31
TR - Turchia 31
UA - Ucraina 31
ZA - Sudafrica 25
PH - Filippine 24
MX - Messico 23
SA - Arabia Saudita 22
VE - Venezuela 21
EC - Ecuador 20
NL - Olanda 19
AT - Austria 18
TW - Taiwan 17
ES - Italia 16
JP - Giappone 16
PL - Polonia 14
UZ - Uzbekistan 14
KE - Kenya 12
CO - Colombia 11
MA - Marocco 11
MY - Malesia 11
FI - Finlandia 10
AL - Albania 9
CL - Cile 9
PY - Paraguay 9
AE - Emirati Arabi Uniti 8
EG - Egitto 8
JM - Giamaica 8
JO - Giordania 8
CH - Svizzera 7
CR - Costa Rica 6
DZ - Algeria 6
NP - Nepal 6
LT - Lituania 5
TN - Tunisia 5
UY - Uruguay 5
CZ - Repubblica Ceca 4
ET - Etiopia 4
KZ - Kazakistan 4
OM - Oman 4
AZ - Azerbaigian 3
BG - Bulgaria 3
DO - Repubblica Dominicana 3
AM - Armenia 2
GE - Georgia 2
IR - Iran 2
LB - Libano 2
PT - Portogallo 2
RO - Romania 2
RS - Serbia 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
AO - Angola 1
AU - Australia 1
BE - Belgio 1
BO - Bolivia 1
BS - Bahamas 1
BW - Botswana 1
BY - Bielorussia 1
CG - Congo 1
CY - Cipro 1
DJ - Gibuti 1
EU - Europa 1
GA - Gabon 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
HU - Ungheria 1
LY - Libia 1
MZ - Mozambico 1
NA - Namibia 1
NI - Nicaragua 1
PE - Perù 1
PS - Palestinian Territory 1
SC - Seychelles 1
SN - Senegal 1
SX - ???statistics.table.value.countryCode.SX??? 1
TH - Thailandia 1
TZ - Tanzania 1
Totale 7.816
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Città #
Singapore 604
Hong Kong 480
San Jose 414
Ashburn 218
Milan 206
Hefei 149
New York 143
Dublin 141
Seoul 126
Ho Chi Minh City 122
Santa Clara 114
Hanoi 104
Toronto 104
Beijing 97
Chicago 89
Dallas 88
Los Angeles 87
The Dalles 73
Rome 64
Lauterbourg 57
Frankfurt am Main 49
Moscow 44
São Paulo 44
Princeton 42
Buffalo 32
Bologna 29
Ferrara 29
Montreal 23
Council Bluffs 20
Jakarta 20
Lawrence 20
Nuremberg 20
Orem 20
Baghdad 19
Tukwila 19
Ann Arbor 16
Biên Hòa 16
Chandler 16
Da Nang 16
Figino 15
Taipei 15
Lahore 14
Tokyo 14
Brasília 13
Haiphong 13
Nairobi 12
Tashkent 12
Boston 11
Brooklyn 11
Guangzhou 11
Warsaw 11
Columbus 10
Denver 10
Fairfield 10
Johannesburg 10
Naples 10
New Delhi 10
Phoenix 10
Pune 10
San Diego 10
San Giuseppe Vesuviano 10
Wilmington 10
Houston 9
Hải Dương 9
Mumbai 9
Seattle 9
Amman 8
Boardman 8
Bắc Ninh 8
Miami 8
Palermo 8
Quito 8
Rio de Janeiro 8
Riyadh 8
Salt Lake City 8
Turin 8
Vienna 8
Washington 8
Andover 7
Belo Horizonte 7
Cambridge 7
Catania 7
Chennai 7
Delhi 7
Guarulhos 7
Jeddah 7
Lappeenranta 7
London 7
Manchester 7
Poplar 7
Salvador 7
Shanghai 7
Ankara 6
Cairo 6
Can Tho 6
Dhaka 6
Guayaquil 6
Istanbul 6
Kuala Lumpur 6
Ninh Bình 6
Totale 4.514
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Nome #
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 213
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 198
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements 188
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 186
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 183
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 182
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach 180
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 173
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 173
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 171
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 171
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 167
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 166
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 157
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 148
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 146
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 143
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 140
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 135
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 130
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 130
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 127
Behavioral Modeling of GaN FETs: a Load-Line Approach 123
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 122
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 121
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 121
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 118
Gate waveform effects on high-efficiency PA design: An experimental validation 116
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 114
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 113
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 113
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 110
Extended operation of class-F power amplifiers using input waveform engineering 109
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 108
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 106
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 103
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 103
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 99
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 97
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 97
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 96
Linear versus nonlinear de-embedding: Experimental investigation 95
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 94
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 93
Impact of transistor model uncertainty on microwave load-pull simulations 91
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 91
Waveform engineering: State-of-the-art and future trends (invited paper) 91
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 90
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 90
A neural network approach for nonlinear modelling of LDMOSFETs 87
Microwave FET model identification based on vector intermodulation measurements 87
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 87
75-VDC GaN technology investigation from a degradation perspective 86
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 85
A GaN power amplifier for 100 VDC bus in GPS L-band 84
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 83
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 83
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 83
Evaluation of FET performance and restrictions by low-frequency measurements 81
Maximizing the benefit of existing equipment for nonlinear and communication measurements 80
Extremely Low-Frequency Measurements Using an Active Bias Tee 80
A new description of fast charge-trapping effects in GaN FETs 77
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 76
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 74
Non-linear look-up table modeling of GaAs HEMTs for mixer application 72
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 72
Rethinking Microwave Power-Bar Characterization 50
A waveform engineering approach for class F operation in a class C biased peaking branch of GaN MMIC Doherty power amplifiers 47
Development of a GaAs Stacked Cells Based on Common-Gate Model Extraction Procedure 43
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology 43
Characterization and Modeling of Dual-Input Doherty Power Amplifier for High Efficiency and Bandwidth 42
Totale 8.033
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Categoria #
all - tutte 34.026
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.026
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022202 0 0 0 0 0 0 81 16 3 1 17 84
2022/2023347 32 88 33 7 26 115 3 22 8 5 3 5
2023/2024446 12 5 5 22 70 132 81 10 58 7 5 39
2024/20251.899 72 204 44 127 156 29 104 81 139 327 169 447
2025/20265.134 424 418 316 602 368 212 667 319 463 420 341 584
2026/20275 5 0 0 0 0 0 0 0 0 0 0 0
Totale 8.033