The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.
Crupi, G., Raffo, A., Avolio, G., Bosi, G., Sivverini, G., Palomba, F., et al. (2015). Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design. SOLID-STATE ELECTRONICS, 104, 25-32 [10.1016/j.sse.2014.11.001].
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design
Bosi, G;
2015
Abstract
The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.
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