A novel solid-state power amplifier technology for RF power sources used in various industrial, scientific and medical (ISM) applications is presented. The prototype devices reported for this paper achieve 200 W CW saturated output power with 80% drain efficiency at 430 MHz and 110 W at 915 MHz. Unlike ubiquitous 50 V solid-state transistor technology, the data we present explore 75 V and 100 V bias operation in UHF band with GaN devices which have the potential of achieving >70% efficiency at kilowatt power level by properly designing and sizing the active devices. Microwave sintering, particle accelerators and magnetic resonance imaging equipment at UHF or L-band are the most likely beneficiary of the technology introduced in this paper.
Formicone, G., Burger, J., Custer, J., Bosi, G., Raffo, A., Vannini, G. (2016). Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp.33-36). Institute of Electrical and Electronics Engineers Inc. [10.1109/EuMIC.2016.7777482].
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology
Bosi, Gianni;
2016
Abstract
A novel solid-state power amplifier technology for RF power sources used in various industrial, scientific and medical (ISM) applications is presented. The prototype devices reported for this paper achieve 200 W CW saturated output power with 80% drain efficiency at 430 MHz and 110 W at 915 MHz. Unlike ubiquitous 50 V solid-state transistor technology, the data we present explore 75 V and 100 V bias operation in UHF band with GaN devices which have the potential of achieving >70% efficiency at kilowatt power level by properly designing and sizing the active devices. Microwave sintering, particle accelerators and magnetic resonance imaging equipment at UHF or L-band are the most likely beneficiary of the technology introduced in this paper.
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