We propagate the uncertainty of measurements used for the identification of a transistor nonlinear model to microwave load-pull simulations. The results are presented for a 0.15-μm GaAs pHEMT under class-AB regime at different frequencies of operation.
Bosi, G., Raffo, A., Vannini, G., Avolio, G., Schreurs, D. (2017). Impact of transistor model uncertainty on microwave load-pull simulations. In I2MTC 2017 - 2017 IEEE International Instrumentation and Measurement Technology Conference, Proceedings (pp.37-42). Institute of Electrical and Electronics Engineers Inc. [10.1109/I2MTC.2017.7969653].
Impact of transistor model uncertainty on microwave load-pull simulations
Bosi, Gianni;
2017
Abstract
We propagate the uncertainty of measurements used for the identification of a transistor nonlinear model to microwave load-pull simulations. The results are presented for a 0.15-μm GaAs pHEMT under class-AB regime at different frequencies of operation.
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