Bicocca Open Archive

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GUZZI, MARIO
 Distribuzione geografica
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Continente #
NA - Nord America 9.092
EU - Europa 3.695
AS - Asia 1.399
AF - Africa 10
SA - Sud America 8
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
Totale 14.213
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Nazione #
US - Stati Uniti d'America 8.945
SE - Svezia 772
DE - Germania 596
IE - Irlanda 552
CN - Cina 540
UA - Ucraina 540
SG - Singapore 395
IT - Italia 343
RU - Federazione Russa 310
GB - Regno Unito 261
VN - Vietnam 177
CA - Canada 144
HK - Hong Kong 134
FI - Finlandia 125
IN - India 73
FR - Francia 49
NL - Olanda 42
AT - Austria 39
BE - Belgio 23
JP - Giappone 22
DK - Danimarca 13
IR - Iran 13
TR - Turchia 13
MA - Marocco 6
BR - Brasile 5
KR - Corea 5
RO - Romania 5
TW - Taiwan 5
CH - Svizzera 4
PH - Filippine 4
AU - Australia 3
CZ - Repubblica Ceca 3
GR - Grecia 3
LT - Lituania 3
MU - Mauritius 3
MX - Messico 3
A2 - ???statistics.table.value.countryCode.A2??? 2
CL - Cile 2
EU - Europa 2
HR - Croazia 2
HU - Ungheria 2
ID - Indonesia 2
MY - Malesia 2
NZ - Nuova Zelanda 2
SA - Arabia Saudita 2
TH - Thailandia 2
UZ - Uzbekistan 2
BG - Bulgaria 1
BN - Brunei Darussalam 1
EC - Ecuador 1
EE - Estonia 1
IL - Israele 1
IQ - Iraq 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MC - Monaco 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PK - Pakistan 1
PL - Polonia 1
PT - Portogallo 1
RS - Serbia 1
TN - Tunisia 1
Totale 14.213
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Città #
Ann Arbor 1.240
Woodbridge 1.127
Fairfield 906
Chandler 716
Houston 689
Jacksonville 611
Dublin 540
Ashburn 466
Frankfurt am Main 381
Seattle 358
Cambridge 336
Wilmington 299
Singapore 294
Dearborn 279
New York 267
Santa Clara 209
Princeton 194
Hong Kong 132
Shanghai 121
Milan 112
Dong Ket 108
Nanjing 108
Lachine 97
Altamura 85
Lawrence 84
Beijing 78
Boardman 63
Andover 55
San Diego 50
Southend 43
Philadelphia 34
Shenyang 34
Vienna 34
Nanchang 33
Huizen 32
Falls Church 26
Helsinki 26
Toronto 26
Changsha 24
Hebei 23
Brussels 22
Ottawa 20
Mountain View 19
Jiaxing 18
Jinan 18
Los Angeles 17
Norwalk 17
London 16
Fremont 15
Guangzhou 15
San Mateo 11
Tianjin 11
Auburn Hills 8
Munich 8
Zhengzhou 8
Redmond 7
Hangzhou 6
Nürnberg 6
Rome 6
Tétouan 6
Chicago 5
Hanoi 5
Hefei 5
Hounslow 5
Kilburn 5
Ningbo 5
Orsay 5
University Park 5
Acton 4
Amsterdam 4
Cremona 4
Dresden 4
Leawood 4
Sacramento 4
Wuhan 4
Zurich 4
Berlin 3
Kashan 3
Kunming 3
Loreto 3
Prescot 3
Pune 3
São Paulo 3
Washington 3
Auckland 2
Boise 2
Borgo Vercelli 2
Bregnano 2
Brescia 2
Budapest 2
Chiswick 2
Cormano 2
Dallas 2
Edinburgh 2
Evanston 2
Falkenstein 2
Fuzhou 2
Garching 2
Hanover 2
Jakarta 2
Totale 10.722
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Nome #
Optical spin injection and spin lifetime in Ge heterostructures 218
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 216
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 212
Optical spin injection and spin lifetime in Ge heterostructures 209
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 203
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 201
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 199
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 197
NEUTRON-IRRADIATION EFFECTS IN AMORPHOUS SIO2 - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC-RESONANCE 186
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 186
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 185
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 183
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 182
Characterization Studies of Purified HgI2 Precursors 181
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures 181
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN 180
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 180
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 179
Raman Spectroscopy of Si1-xGex Epilayers 178
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 176
Large area HgI2 pixel detector experiments 176
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 174
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 170
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 170
Phonon strain shift coefficients in SixGe1-x alloys 170
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates 169
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 168
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 168
Direct gap related optical transitions in Ge/SiGe quantum wells 167
Optical spin injection in SiGe heterostructures 167
Thermal tunability of monolithic polymer microcavities 166
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 166
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case 164
Emission lineshape in strain free quantum dot 161
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 159
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 158
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 157
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 156
Towards imaging with polycrystalline mercuric iodide semiconductor detectors 152
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 151
Raman efficiency in SiGe alloys 148
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 147
Valley-dependent spin polarization and long-lived electron spins in germanium 147
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 147
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 146
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 144
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 143
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 143
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 143
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 143
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 142
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 142
InAs quantum dots grown on nonconventionally oriented GaAs substrates 142
Optical spin orientation in SiGe heterostructures 142
Determination of Raman Efficiency in SiGe Alloys 141
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 141
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 140
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 139
Ge Crystals on Si Show Their Light 139
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 137
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 137
Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells 136
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 135
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 134
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 134
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 133
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 133
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 132
Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence 132
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 131
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 130
3D island nucleation behaviour on high index substrates 129
NEUTRON-IRRADIATION EFFECTS IN QUARTZ - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC RESONANCE 129
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 129
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 128
Robust optical orientation of spins in Ge/SiGe quantum wells 128
Spin-resolved study of direct band-gap recombination in bulk Ge 128
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 127
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 126
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 121
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 120
Photoluminescence circular dichroism and spin polarization in Germanium 119
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 116
Strain-induced shift of phonon modes in Si1-xGex alloys 115
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 115
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 115
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 115
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 113
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 113
Dephasing in Ge/SiGe quantum wells by means of coherent oscillations 110
Ge/SiGe multiple quantum wells on high index Si substrates 106
Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures 102
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 92
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 91
III/V Semiconductor Quantum Dots 89
Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon 84
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 79
Totale 14.383
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Categoria #
all - tutte 46.163
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 46.163
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.699 0 0 0 0 265 305 357 176 254 138 142 62
2020/20211.595 120 84 159 176 98 112 118 92 108 206 63 259
2021/20221.233 23 109 278 86 70 78 71 60 65 85 83 225
2022/20232.440 244 740 231 264 173 355 26 107 172 12 87 29
2023/20241.475 52 41 71 34 203 455 329 35 76 8 17 154
2024/2025972 153 339 139 125 216 0 0 0 0 0 0 0
Totale 14.383