GUZZI, MARIO
 Distribuzione geografica
Continente #
NA - Nord America 11.634
AS - Asia 5.484
EU - Europa 4.436
SA - Sud America 649
AF - Africa 114
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 5
Totale 22.328
Nazione #
US - Stati Uniti d'America 11.392
SG - Singapore 2.073
CN - Cina 1.299
SE - Svezia 782
DE - Germania 690
HK - Hong Kong 631
RU - Federazione Russa 594
VN - Vietnam 576
UA - Ucraina 564
IE - Irlanda 556
BR - Brasile 479
IT - Italia 383
GB - Regno Unito 303
IN - India 209
FR - Francia 180
CA - Canada 178
FI - Finlandia 143
KR - Corea 132
BD - Bangladesh 93
IQ - Iraq 73
NL - Olanda 63
AR - Argentina 57
PK - Pakistan 55
TR - Turchia 47
JP - Giappone 46
AT - Austria 43
MX - Messico 37
SA - Arabia Saudita 37
PH - Filippine 35
MA - Marocco 30
EC - Ecuador 29
UZ - Uzbekistan 28
BE - Belgio 26
ID - Indonesia 26
PL - Polonia 23
ZA - Sudafrica 22
CO - Colombia 20
VE - Venezuela 18
CL - Cile 16
ES - Italia 16
KE - Kenya 16
DK - Danimarca 15
IR - Iran 13
MY - Malesia 13
NP - Nepal 13
PY - Paraguay 11
AE - Emirati Arabi Uniti 10
JO - Giordania 10
IL - Israele 9
TN - Tunisia 9
DZ - Algeria 8
EG - Egitto 8
UY - Uruguay 8
JM - Giamaica 7
RO - Romania 7
TH - Thailandia 7
AZ - Azerbaigian 6
BO - Bolivia 6
CH - Svizzera 6
PS - Palestinian Territory 6
RS - Serbia 6
TW - Taiwan 6
CR - Costa Rica 5
CZ - Repubblica Ceca 5
HU - Ungheria 5
KZ - Kazakistan 5
LB - Libano 5
LT - Lituania 5
AU - Australia 4
OM - Oman 4
PA - Panama 4
PE - Perù 4
SN - Senegal 4
AL - Albania 3
ET - Etiopia 3
GR - Grecia 3
HR - Croazia 3
MM - Myanmar 3
MU - Mauritius 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BG - Bulgaria 2
BN - Brunei Darussalam 2
EU - Europa 2
HN - Honduras 2
KG - Kirghizistan 2
KW - Kuwait 2
LA - Repubblica Popolare Democratica del Laos 2
LY - Libia 2
NI - Nicaragua 2
NZ - Nuova Zelanda 2
PT - Portogallo 2
TT - Trinidad e Tobago 2
BH - Bahrain 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
DO - Repubblica Dominicana 1
EE - Estonia 1
Totale 22.309
Città #
Ann Arbor 1.240
Singapore 1.171
Woodbridge 1.127
Ashburn 1.082
Fairfield 906
Chandler 716
Houston 693
Hong Kong 625
Jacksonville 612
Dublin 544
San Jose 484
Frankfurt am Main 400
Seattle 359
Cambridge 336
Santa Clara 322
Wilmington 299
New York 294
Dearborn 279
Beijing 200
Hefei 198
Princeton 194
Dallas 192
Chicago 138
Shanghai 132
Milan 129
Seoul 125
The Dalles 124
Hanoi 120
Los Angeles 118
Dong Ket 108
Nanjing 108
Ho Chi Minh City 98
Lachine 97
Altamura 85
Lauterbourg 85
Lawrence 84
Council Bluffs 70
Buffalo 64
Boardman 63
Andover 55
San Diego 51
Southend 43
Guangzhou 41
Moscow 41
São Paulo 36
Vienna 36
Changsha 35
Munich 35
Philadelphia 35
Nanchang 34
Shenyang 34
Baghdad 33
Huizen 32
Helsinki 31
Toronto 31
Falls Church 26
Brussels 23
Hebei 23
Tashkent 23
Ottawa 21
Brooklyn 20
Jinan 20
Lahore 19
London 19
Mountain View 19
Jiaxing 18
Dhaka 17
Norwalk 17
Chennai 16
Da Nang 16
Tianjin 16
Warsaw 16
Amsterdam 15
Fremont 15
Orem 15
Brasília 14
Montreal 14
Phoenix 14
Rio de Janeiro 14
Tokyo 14
Columbus 13
Mumbai 13
Nairobi 13
Redondo Beach 13
Salt Lake City 13
Belo Horizonte 12
Boston 12
Haiphong 12
Turku 12
New Delhi 11
Riyadh 11
San Mateo 11
Zhengzhou 11
Buenos Aires 10
Curitiba 10
Karachi 10
Kuala Lumpur 10
Manchester 10
Santiago 10
Amman 9
Totale 15.294
Nome #
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 344
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 332
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 320
Optical spin injection and spin lifetime in Ge heterostructures 295
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 294
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 293
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 287
Optical spin injection and spin lifetime in Ge heterostructures 287
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 284
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 283
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 280
Raman efficiency in SiGe alloys 280
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 277
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 275
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 271
Valley-dependent spin polarization and long-lived electron spins in germanium 269
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN 268
Characterization Studies of Purified HgI2 Precursors 265
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 264
Large area HgI2 pixel detector experiments 263
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures 261
Photoluminescence circular dichroism and spin polarization in Germanium 260
Self-aggregation of InAs quantum dots on (N11) GaAs substrates 259
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 259
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 257
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 254
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 254
Thermal tunability of monolithic polymer microcavities 252
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 252
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 251
NEUTRON-IRRADIATION EFFECTS IN AMORPHOUS SIO2 - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC-RESONANCE 251
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 250
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 250
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 250
Phonon strain shift coefficients in SixGe1-x alloys 249
Raman Spectroscopy of Si1-xGex Epilayers 247
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 244
Direct gap related optical transitions in Ge/SiGe quantum wells 244
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 243
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 241
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 241
Towards imaging with polycrystalline mercuric iodide semiconductor detectors 238
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 236
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 234
Emission lineshape in strain free quantum dot 234
Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells 234
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: The (311)A case 233
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 233
InAs quantum dots grown on nonconventionally oriented GaAs substrates 231
Optical spin injection in SiGe heterostructures 231
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 227
Optical spin orientation in SiGe heterostructures 227
Determination of Raman Efficiency in SiGe Alloys 226
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 226
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 225
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 224
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 224
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 222
Ge Crystals on Si Show Their Light 222
Spin-resolved study of direct band-gap recombination in bulk Ge 222
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 221
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 219
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 215
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 215
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 214
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 210
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 210
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 207
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 206
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 203
Robust optical orientation of spins in Ge/SiGe quantum wells 203
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 202
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 201
NEUTRON-IRRADIATION EFFECTS IN QUARTZ - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC RESONANCE 201
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 200
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 199
Dephasing in Ge/SiGe quantum wells by means of coherent oscillations 199
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 195
3D island nucleation behaviour on high index substrates 195
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 195
Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence 194
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 193
Strain-induced shift of phonon modes in Si1-xGex alloys 192
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 192
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 191
Ge/SiGe multiple quantum wells on high index Si substrates 190
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 186
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 183
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 183
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 180
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 180
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 178
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 178
Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures 174
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 151
Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon 148
III/V Semiconductor Quantum Dots 146
Totale 22.498
Categoria #
all - tutte 70.586
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 70.586


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021528 0 0 0 0 0 0 0 0 0 206 63 259
2021/20221.233 23 109 278 86 70 78 71 60 65 85 83 225
2022/20232.440 244 740 231 264 173 355 26 107 172 12 87 29
2023/20241.475 52 41 71 34 203 455 329 35 76 8 17 154
2024/20252.844 153 339 139 125 218 160 84 186 207 467 208 558
2025/20266.243 693 603 597 640 684 335 994 377 711 609 0 0
Totale 22.498