Bicocca Open Archive

Logo unimib boa
GUZZI, MARIO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 8.689
EU - Europa 3.580
AS - Asia 1.171
AF - Africa 10
SA - Sud America 8
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 4
Totale 13.466
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 8.547
SE - Svezia 772
DE - Germania 591
IE - Irlanda 552
UA - Ucraina 540
CN - Cina 533
IT - Italia 338
GB - Regno Unito 253
RU - Federazione Russa 222
VN - Vietnam 177
SG - Singapore 176
CA - Canada 140
HK - Hong Kong 134
FI - Finlandia 125
IN - India 73
FR - Francia 48
NL - Olanda 42
AT - Austria 37
JP - Giappone 22
BE - Belgio 20
DK - Danimarca 13
IR - Iran 13
TR - Turchia 13
MA - Marocco 6
BR - Brasile 5
KR - Corea 5
RO - Romania 5
CH - Svizzera 4
PH - Filippine 4
TW - Taiwan 4
CZ - Repubblica Ceca 3
GR - Grecia 3
MU - Mauritius 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AU - Australia 2
CL - Cile 2
EU - Europa 2
HR - Croazia 2
HU - Ungheria 2
ID - Indonesia 2
MX - Messico 2
MY - Malesia 2
NZ - Nuova Zelanda 2
SA - Arabia Saudita 2
UZ - Uzbekistan 2
BG - Bulgaria 1
BN - Brunei Darussalam 1
EC - Ecuador 1
EE - Estonia 1
IL - Israele 1
IQ - Iraq 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MC - Monaco 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PK - Pakistan 1
PL - Polonia 1
PT - Portogallo 1
RS - Serbia 1
TH - Thailandia 1
TN - Tunisia 1
Totale 13.466
Salva come PNG Salva come JPEG
Città #
Ann Arbor 1.240
Woodbridge 1.127
Fairfield 906
Chandler 716
Houston 689
Jacksonville 611
Dublin 540
Ashburn 455
Frankfurt am Main 378
Seattle 358
Cambridge 336
Wilmington 299
Dearborn 279
New York 267
Princeton 194
Hong Kong 132
Shanghai 121
Milan 111
Dong Ket 108
Nanjing 108
Lachine 97
Singapore 88
Altamura 85
Lawrence 84
Beijing 78
Boardman 63
Andover 55
San Diego 50
Southend 43
Philadelphia 34
Shenyang 34
Nanchang 33
Vienna 33
Huizen 32
Falls Church 26
Helsinki 26
Changsha 24
Toronto 24
Hebei 23
Brussels 19
Mountain View 19
Jiaxing 18
Jinan 18
Ottawa 18
Los Angeles 17
Norwalk 17
Fremont 15
Guangzhou 14
London 11
San Mateo 11
Tianjin 11
Auburn Hills 8
Zhengzhou 8
Munich 7
Redmond 7
Hangzhou 6
Nürnberg 6
Rome 6
Tétouan 6
Chicago 5
Hanoi 5
Hefei 5
Hounslow 5
Kilburn 5
Ningbo 5
Orsay 5
University Park 5
Acton 4
Amsterdam 4
Cremona 4
Dresden 4
Leawood 4
Sacramento 4
Wuhan 4
Zurich 4
Berlin 3
Kashan 3
Kunming 3
Loreto 3
Prescot 3
Pune 3
São Paulo 3
Washington 3
Auckland 2
Boise 2
Borgo Vercelli 2
Bregnano 2
Brescia 2
Budapest 2
Chiswick 2
Cormano 2
Dallas 2
Edinburgh 2
Evanston 2
Falkenstein 2
Fuzhou 2
Garching 2
Jakarta 2
Kish 2
Kuala Lumpur 2
Totale 10.279
Salva come PNG Salva come JPEG
Nome #
Optical spin injection and spin lifetime in Ge heterostructures 213
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 207
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 205
Optical spin injection and spin lifetime in Ge heterostructures 202
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 193
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 185
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 184
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 183
NEUTRON-IRRADIATION EFFECTS IN AMORPHOUS SIO2 - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC-RESONANCE 177
Characterization Studies of Purified HgI2 Precursors 176
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN 176
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 176
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures 174
Raman Spectroscopy of Si1-xGex Epilayers 173
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 173
Large area HgI2 pixel detector experiments 171
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 171
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 170
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 169
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 167
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 166
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 166
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 164
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates 164
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 163
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 163
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case 159
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 159
Thermal tunability of monolithic polymer microcavities 158
Optical spin injection in SiGe heterostructures 157
Phonon strain shift coefficients in SixGe1-x alloys 156
Emission lineshape in strain free quantum dot 156
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 154
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 153
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 152
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 152
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 151
Direct gap related optical transitions in Ge/SiGe quantum wells 151
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 145
Raman efficiency in SiGe alloys 144
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 140
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 140
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 139
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 139
Valley-dependent spin polarization and long-lived electron spins in germanium 139
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 138
Towards imaging with polycrystalline mercuric iodide semiconductor detectors 138
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 137
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 136
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 135
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 135
InAs quantum dots grown on nonconventionally oriented GaAs substrates 135
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 135
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 134
Ge Crystals on Si Show Their Light 133
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 133
Optical spin orientation in SiGe heterostructures 133
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 132
Determination of Raman Efficiency in SiGe Alloys 132
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 131
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 129
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 129
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 128
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 128
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 128
Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells 128
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 127
Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence 126
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 125
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 125
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 123
3D island nucleation behaviour on high index substrates 122
NEUTRON-IRRADIATION EFFECTS IN QUARTZ - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC RESONANCE 122
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 122
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 121
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 120
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 120
Robust optical orientation of spins in Ge/SiGe quantum wells 117
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 114
Photoluminescence circular dichroism and spin polarization in Germanium 111
Spin-resolved study of direct band-gap recombination in bulk Ge 111
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 110
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 110
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 109
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 108
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 108
Strain-induced shift of phonon modes in Si1-xGex alloys 107
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 105
Dephasing in Ge/SiGe quantum wells by means of coherent oscillations 104
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 103
Ge/SiGe multiple quantum wells on high index Si substrates 99
Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures 96
III/V Semiconductor Quantum Dots 85
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 85
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 84
Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon 79
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 76
Totale 13.636
Salva come PNG Salva come JPEG
Categoria #
all - tutte 40.997
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 40.997
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.275 0 123 222 231 265 305 357 176 254 138 142 62
2020/20211.595 120 84 159 176 98 112 118 92 108 206 63 259
2021/20221.233 23 109 278 86 70 78 71 60 65 85 83 225
2022/20232.440 244 740 231 264 173 355 26 107 172 12 87 29
2023/20241.475 52 41 71 34 203 455 329 35 76 8 17 154
2024/2025225 153 72 0 0 0 0 0 0 0 0 0 0
Totale 13.636