Bicocca Open Archive

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GUZZI, MARIO
 Distribuzione geografica
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Continente #
NA - Nord America 12.453
AS - Asia 5.507
EU - Europa 4.711
SA - Sud America 650
AF - Africa 114
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 5
Totale 23.446
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Nazione #
US - Stati Uniti d'America 11.693
SG - Singapore 2.081
CN - Cina 1.307
SE - Svezia 782
CA - Canada 694
DE - Germania 690
IT - Italia 652
HK - Hong Kong 631
RU - Federazione Russa 594
VN - Vietnam 583
UA - Ucraina 564
IE - Irlanda 556
BR - Brasile 479
GB - Regno Unito 305
IN - India 209
FR - Francia 180
FI - Finlandia 143
KR - Corea 132
BD - Bangladesh 93
IQ - Iraq 73
NL - Olanda 63
AR - Argentina 57
PK - Pakistan 55
TR - Turchia 47
JP - Giappone 46
AT - Austria 45
MX - Messico 37
SA - Arabia Saudita 37
PH - Filippine 35
MA - Marocco 30
EC - Ecuador 29
UZ - Uzbekistan 28
BE - Belgio 26
ID - Indonesia 26
PL - Polonia 24
ZA - Sudafrica 22
CO - Colombia 20
VE - Venezuela 18
CL - Cile 16
ES - Italia 16
KE - Kenya 16
DK - Danimarca 15
IR - Iran 13
MY - Malesia 13
NP - Nepal 13
PY - Paraguay 11
AE - Emirati Arabi Uniti 10
JO - Giordania 10
IL - Israele 9
TN - Tunisia 9
DZ - Algeria 8
EG - Egitto 8
UY - Uruguay 8
JM - Giamaica 7
RO - Romania 7
TH - Thailandia 7
AZ - Azerbaigian 6
BO - Bolivia 6
CH - Svizzera 6
PS - Palestinian Territory 6
RS - Serbia 6
TW - Taiwan 6
CR - Costa Rica 5
CZ - Repubblica Ceca 5
HU - Ungheria 5
KZ - Kazakistan 5
LB - Libano 5
LT - Lituania 5
AU - Australia 4
OM - Oman 4
PA - Panama 4
PE - Perù 4
SN - Senegal 4
AL - Albania 3
ET - Etiopia 3
GR - Grecia 3
HR - Croazia 3
MM - Myanmar 3
MU - Mauritius 3
PT - Portogallo 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BG - Bulgaria 2
BN - Brunei Darussalam 2
EU - Europa 2
GT - Guatemala 2
GY - Guiana 2
HN - Honduras 2
KG - Kirghizistan 2
KW - Kuwait 2
LA - Repubblica Popolare Democratica del Laos 2
LY - Libia 2
NI - Nicaragua 2
NZ - Nuova Zelanda 2
BH - Bahrain 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
Totale 23.427
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Città #
Ann Arbor 1.240
Singapore 1.171
Woodbridge 1.127
Ashburn 1.108
Fairfield 906
Chandler 716
Houston 694
Hong Kong 625
Jacksonville 612
San Jose 594
Dublin 544
Toronto 542
Frankfurt am Main 400
Seattle 359
Cambridge 336
Santa Clara 329
New York 299
Wilmington 299
Dearborn 279
Milan 233
Dallas 202
Beijing 201
Hefei 198
Princeton 194
Chicago 139
Shanghai 132
Hanoi 125
Seoul 125
The Dalles 124
Los Angeles 119
Dong Ket 108
Nanjing 108
Ho Chi Minh City 98
Lachine 97
Council Bluffs 90
Altamura 85
Lauterbourg 85
Lawrence 84
Buffalo 68
Boardman 63
Andover 55
San Diego 51
Southend 43
Rome 42
Guangzhou 41
Moscow 41
Philadelphia 38
Vienna 38
São Paulo 36
Changsha 35
Munich 35
Nanchang 34
Shenyang 34
Baghdad 33
Huizen 32
Helsinki 31
Falls Church 26
Brooklyn 23
Brussels 23
Hebei 23
Tashkent 23
Ottawa 21
Jinan 20
Lahore 19
London 19
Mountain View 19
Jiaxing 18
Dhaka 17
Norwalk 17
Chennai 16
Da Nang 16
Orem 16
Phoenix 16
Tianjin 16
Warsaw 16
Amsterdam 15
Columbus 15
Fremont 15
Montreal 15
Boston 14
Brasília 14
Rio de Janeiro 14
Tokyo 14
Mumbai 13
Nairobi 13
Redondo Beach 13
Salt Lake City 13
Belo Horizonte 12
Haiphong 12
Turku 12
Atlanta 11
Hangzhou 11
New Delhi 11
Riyadh 11
San Mateo 11
Zhengzhou 11
Buenos Aires 10
Curitiba 10
Karachi 10
Kuala Lumpur 10
Totale 16.151
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Nome #
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 355
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 352
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 340
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 312
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 308
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 297
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 297
Optical spin injection and spin lifetime in Ge heterostructures 297
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 296
Optical spin injection and spin lifetime in Ge heterostructures 296
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 291
Raman efficiency in SiGe alloys 291
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 287
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 285
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 282
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN 281
Characterization Studies of Purified HgI2 Precursors 280
Valley-dependent spin polarization and long-lived electron spins in germanium 277
Thermal tunability of monolithic polymer microcavities 272
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 272
Large area HgI2 pixel detector experiments 272
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures 270
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 270
Self-aggregation of InAs quantum dots on (N11) GaAs substrates 269
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 269
Photoluminescence circular dichroism and spin polarization in Germanium 268
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 267
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 267
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 262
NEUTRON-IRRADIATION EFFECTS IN AMORPHOUS SIO2 - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC-RESONANCE 262
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 262
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 260
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 260
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 260
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 259
Phonon strain shift coefficients in SixGe1-x alloys 259
Raman Spectroscopy of Si1-xGex Epilayers 258
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: The (311)A case 251
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 251
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 251
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 250
Direct gap related optical transitions in Ge/SiGe quantum wells 250
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 249
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 248
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 247
Towards imaging with polycrystalline mercuric iodide semiconductor detectors 247
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 247
Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells 246
Emission lineshape in strain free quantum dot 245
InAs quantum dots grown on nonconventionally oriented GaAs substrates 244
Optical spin injection in SiGe heterostructures 241
Optical spin orientation in SiGe heterostructures 240
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 239
Determination of Raman Efficiency in SiGe Alloys 239
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 237
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 236
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 236
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 235
Spin-resolved study of direct band-gap recombination in bulk Ge 235
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 234
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 234
Ge Crystals on Si Show Their Light 232
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 230
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 226
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 224
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 221
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 221
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 220
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 219
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 216
Dephasing in Ge/SiGe quantum wells by means of coherent oscillations 213
Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence 213
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 212
Robust optical orientation of spins in Ge/SiGe quantum wells 212
NEUTRON-IRRADIATION EFFECTS IN QUARTZ - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC RESONANCE 210
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 210
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 209
Strain-induced shift of phonon modes in Si1-xGex alloys 206
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 206
3D island nucleation behaviour on high index substrates 206
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 205
Ge/SiGe multiple quantum wells on high index Si substrates 203
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 202
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 202
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 201
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 199
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 195
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 195
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 193
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 191
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 188
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 187
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 187
Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures 186
III/V Semiconductor Quantum Dots 165
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 159
Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon 158
Totale 23.616
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Categoria #
all - tutte 74.877
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.877
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021259 0 0 0 0 0 0 0 0 0 0 0 259
2021/20221.233 23 109 278 86 70 78 71 60 65 85 83 225
2022/20232.440 244 740 231 264 173 355 26 107 172 12 87 29
2023/20241.475 52 41 71 34 203 455 329 35 76 8 17 154
2024/20252.844 153 339 139 125 218 160 84 186 207 467 208 558
2025/20267.361 693 603 597 640 684 335 994 377 711 617 642 468
Totale 23.616