GUZZI, MARIO
 Distribuzione geografica
Continente #
NA - Nord America 8.694
EU - Europa 3.435
AS - Asia 982
AF - Africa 10
SA - Sud America 8
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 4
Totale 13.137
Nazione #
US - Stati Uniti d'America 8.552
SE - Svezia 772
DE - Germania 590
IE - Irlanda 552
UA - Ucraina 540
CN - Cina 497
IT - Italia 335
GB - Regno Unito 254
VN - Vietnam 177
CA - Canada 140
HK - Hong Kong 134
FI - Finlandia 125
IN - India 73
BE - Belgio 60
FR - Francia 47
NL - Olanda 42
RU - Federazione Russa 40
AT - Austria 37
SG - Singapore 27
JP - Giappone 20
DK - Danimarca 13
IR - Iran 13
TR - Turchia 13
MA - Marocco 6
BR - Brasile 5
KR - Corea 5
RO - Romania 5
CH - Svizzera 4
CZ - Repubblica Ceca 4
PH - Filippine 4
TW - Taiwan 4
GR - Grecia 3
MU - Mauritius 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AU - Australia 2
CL - Cile 2
EU - Europa 2
HR - Croazia 2
HU - Ungheria 2
MX - Messico 2
MY - Malesia 2
NZ - Nuova Zelanda 2
SA - Arabia Saudita 2
BG - Bulgaria 1
BN - Brunei Darussalam 1
EC - Ecuador 1
EE - Estonia 1
ID - Indonesia 1
IL - Israele 1
IQ - Iraq 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MC - Monaco 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PK - Pakistan 1
PL - Polonia 1
PT - Portogallo 1
RS - Serbia 1
TH - Thailandia 1
TN - Tunisia 1
UZ - Uzbekistan 1
Totale 13.137
Città #
Ann Arbor 1.240
Woodbridge 1.127
Fairfield 906
Chandler 716
Houston 689
Jacksonville 611
Dublin 540
Ashburn 455
Frankfurt am Main 378
Seattle 358
Cambridge 336
Wilmington 299
Dearborn 279
New York 267
Princeton 194
Hong Kong 132
Milan 111
Dong Ket 108
Nanjing 108
Lachine 97
Shanghai 86
Altamura 85
Lawrence 84
Beijing 78
Philadelphia 60
Brussels 59
Andover 55
San Diego 50
Boardman 48
Southend 43
Shenyang 34
Nanchang 33
Vienna 33
Huizen 32
Falls Church 26
Helsinki 26
Changsha 24
Toronto 24
Hebei 23
Mountain View 19
Jiaxing 18
Jinan 18
Ottawa 18
Norwalk 17
Fremont 15
Guangzhou 14
London 12
Los Angeles 12
San Mateo 11
Tianjin 11
Auburn Hills 8
Zhengzhou 8
Munich 7
Redmond 7
Nürnberg 6
Rome 6
Tétouan 6
Chicago 5
Hangzhou 5
Hanoi 5
Hefei 5
Hounslow 5
Kilburn 5
Ningbo 5
Orsay 5
University Park 5
Acton 4
Amsterdam 4
Cremona 4
Leawood 4
Sacramento 4
Wuhan 4
Zurich 4
Berlin 3
Brno 3
Kashan 3
Kunming 3
Loreto 3
Prescot 3
Pune 3
São Paulo 3
Washington 3
Auckland 2
Boise 2
Borgo Vercelli 2
Bregnano 2
Brescia 2
Budapest 2
Chiswick 2
Cormano 2
Dresden 2
Edinburgh 2
Evanston 2
Falkenstein 2
Fuzhou 2
Garching 2
Hanover 2
Kish 2
Kuala Lumpur 2
Lanzhou 2
Totale 10.203
Nome #
Optical spin injection and spin lifetime in Ge heterostructures 211
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 206
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 203
Optical spin injection and spin lifetime in Ge heterostructures 197
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 192
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 182
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 181
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 181
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures 173
Raman Spectroscopy of Si1-xGex Epilayers 172
Characterization Studies of Purified HgI2 Precursors 172
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN 172
NEUTRON-IRRADIATION EFFECTS IN AMORPHOUS SIO2 - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC-RESONANCE 172
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 171
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 170
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 169
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 167
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 167
Large area HgI2 pixel detector experiments 166
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 163
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 163
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates 162
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 162
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 161
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 159
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 159
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case 157
Phonon strain shift coefficients in SixGe1-x alloys 154
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 153
Thermal tunability of monolithic polymer microcavities 152
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 152
Emission lineshape in strain free quantum dot 151
Optical spin injection in SiGe heterostructures 151
Direct gap related optical transitions in Ge/SiGe quantum wells 150
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 150
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 149
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 148
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 147
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 142
Raman efficiency in SiGe alloys 140
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 138
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 137
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 137
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 137
Towards imaging with polycrystalline mercuric iodide semiconductor detectors 135
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 134
Valley-dependent spin polarization and long-lived electron spins in germanium 134
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 133
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 133
Optical spin orientation in SiGe heterostructures 133
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 132
InAs quantum dots grown on nonconventionally oriented GaAs substrates 132
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 132
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 131
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 131
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 130
Ge Crystals on Si Show Their Light 130
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 128
Determination of Raman Efficiency in SiGe Alloys 128
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 128
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 127
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 126
Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells 125
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 124
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 124
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 123
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 122
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 122
Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence 122
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 122
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 119
3D island nucleation behaviour on high index substrates 118
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 118
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 118
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 117
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 117
NEUTRON-IRRADIATION EFFECTS IN QUARTZ - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC RESONANCE 115
Robust optical orientation of spins in Ge/SiGe quantum wells 114
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 110
Photoluminescence circular dichroism and spin polarization in Germanium 108
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 108
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 106
Spin-resolved study of direct band-gap recombination in bulk Ge 106
Strain-induced shift of phonon modes in Si1-xGex alloys 105
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 105
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 105
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 103
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 102
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 100
Ge/SiGe multiple quantum wells on high index Si substrates 97
Dephasing in Ge/SiGe quantum wells by means of coherent oscillations 96
Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures 90
III/V Semiconductor Quantum Dots 83
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 81
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 80
Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon 76
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 71
Totale 13.307
Categoria #
all - tutte 34.895
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.895


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019873 0 0 0 0 0 0 0 0 70 166 329 308
2019/20202.613 338 123 222 231 265 305 357 176 254 138 142 62
2020/20211.595 120 84 159 176 98 112 118 92 108 206 63 259
2021/20221.233 23 109 278 86 70 78 71 60 65 85 83 225
2022/20232.502 244 740 231 264 173 355 31 108 174 16 135 31
2023/20241.309 54 41 72 40 207 455 329 35 76 0 0 0
Totale 13.307