InAs self-assembled quantum dots (SADs) are grown on (N11)B GaAs by molecular beam epitaxy using the Stranski - Krastanow growth mode. Four GaAs substrate orientations, namely (211)B, (311)B, (411)B and (511)B have been analyzed. For each substrate we prepared three different InAs coverages (1.8, 2.3 and 2.8 monolayers) for each orientation. All the samples show photoluminescence at 2 K of evident SAD origin, with broad peaks in the range 1.0 to 1.4 eV. The luminescence efficiency of the (N11)B samples is comparable to the one from (100) reference samples and the integrated intensity is not appreciably quenched up to 70 K. For each surface orientation the SADs' size is growing, as expected, with the increasing coverage. On the other hand, at a given coverage, an enhancement of the localisation energy of the SAD states belonging to the high index respect to the (100) surface samples is observed. This effect is generally more pronounced for surface orientations with high N. © 1998 Elsevier Science B.V. All rights reserved.

Sanguinetti, S., Fortina, S., Grilli, E., Guzzi, M., Henini, M., & Eaves, L. (1998). Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces. MICROELECTRONIC ENGINEERING, 43-44, 67-70 [10.1016/S0167-9317(98)00222-6].

Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces

SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
1998

Abstract

InAs self-assembled quantum dots (SADs) are grown on (N11)B GaAs by molecular beam epitaxy using the Stranski - Krastanow growth mode. Four GaAs substrate orientations, namely (211)B, (311)B, (411)B and (511)B have been analyzed. For each substrate we prepared three different InAs coverages (1.8, 2.3 and 2.8 monolayers) for each orientation. All the samples show photoluminescence at 2 K of evident SAD origin, with broad peaks in the range 1.0 to 1.4 eV. The luminescence efficiency of the (N11)B samples is comparable to the one from (100) reference samples and the integrated intensity is not appreciably quenched up to 70 K. For each surface orientation the SADs' size is growing, as expected, with the increasing coverage. On the other hand, at a given coverage, an enhancement of the localisation energy of the SAD states belonging to the high index respect to the (100) surface samples is observed. This effect is generally more pronounced for surface orientations with high N. © 1998 Elsevier Science B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
Semiconductors, Spectroscopy, Quantum Dots
English
Sanguinetti, S., Fortina, S., Grilli, E., Guzzi, M., Henini, M., & Eaves, L. (1998). Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces. MICROELECTRONIC ENGINEERING, 43-44, 67-70 [10.1016/S0167-9317(98)00222-6].
Sanguinetti, S; Fortina, S; Grilli, E; Guzzi, M; Henini, M; Eaves, L
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/2513
Citazioni
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
Social impact