GRILLI, EMANUELE ENRICO
GRILLI, EMANUELE ENRICO
DIPARTIMENTO DI FISICA "GIUSEPPE OCCHIALINI"
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2
1990 Guzzi, M; Lucchini, G; Martini, M; Pio, F; Vedda, A; Grilli, E
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots
1996 Brusaferri, L; Sanguinetti, S; Grilli, E; Guzzi, M; Bignazzi, A; Bogani, F; Carraresi, L; Colocci, M; Bosacchi, A; Frigeri, P; Franchi, S
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces
1997 Henini, M; Sanguinetti, S; Brusaferri, L; Grilli, E; Guzzi, M; Upward, M; Moriarty, P; Beton, P
A new simple and low cost scattered transmission accessory for commercial double beam ultraviolet-visible spectrophotometers
1997 Castiglioni, E; Grilli, E; Sanguinetti, S
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates
1998 Sanguinetti, S; Fortina, S; Miotto, A; Grilli, E; Guzzi, M; Henini, M; Polimeni, A; Eaves, L
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots
1998 Henini, M; Sanguinetti, S; Fortina, S; Grilli, E; Guzzi, M; Panzarini, G; Andreani, L; Upward, M; Beton, P; Eaves, L
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces
1998 Sanguinetti, S; Fortina, S; Grilli, E; Guzzi, M; Henini, M; Eaves, L
InAs quantum dots grown on nonconventionally oriented GaAs substrates
1998 Fortina, S; Sanguinetti, S; Grilli, E; Guzzi, M; Henini, M; Polimeni, A; Eaves, L
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41)
1998 Bignazzi, A; Grilli, E; Guzzi, M; Bocchi, C; Bosacchi, A; Franchi, S; Magnanini, R
Erbium-doped silicon epilayers grown by liquid-phase epitaxy
1998 Binetti, S; Cavallini, A; Dellafiore, A; Fraboni, B; Grilli, E; Guzzi, M; Pizzini, S; Sanguinetti, S
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs
1998 Sanguinetti, S; Fortina, S; Grilli, E; Guzzi, M; Henini, M; Upward, M; Moriarty, P; Beton, P; Eaves, L
Characterization Studies of Purified HgI2 Precursors
1999 Schieber, M; Zuck, A; Montalti, M; Braiman, M; Melekhov, ; J., N; J, ; Turchetta, R; Dulinski, W; Husson, D; Riester, J; Sanguinetti, S; Grilli, E; Guzzi, M
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces
1999 Sanguinetti, S; Miotto, A; Castiglioni, S; Grilli, E; Guzzi, M; Henini, M; Polimeni, A; Patane', A; Eaves, L; Main, P
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures
1999 Sanguinetti, S; Chiantoni, G; Grilli, E; Guzzi, M; Henini, M; Polimeni, A; Patane, A; Eaves, L; Main, P
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots
1999 Sanguinetti, S; Castiglioni, S; Grilli, E; Guzzi, M; Panzarini, G; Andreani, L; Henini, M
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots
2000 Sanguinetti, S; Gurioli, M; Grilli, E; Guzzi, M; Henini, M
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures
2000 Sanguinetti, S; Padovani, M; Gurioli, M; Grilli, E; Guzzi, M; Vinattieri, A; Colocci, M; Frigeri, P; Franchi, S; Lazzarini, L; Salviati, G
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case
2000 Chiantoni, G; Miotto, A; Henini, M; Polimeni, A; Patane, A; Eaves, L; Main, P; Sanguinetti, S; Grilli, E; Guzzi, M
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon
2000 Pizzini, S; Guzzi, M; Grilli, E; Borionetti, G
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots
2000 Sanguinetti, S; Padovani, M; Gurioli, M; Grilli, E; Guzzi, M; Vinattieri, A; Colocci, M; Frigeri, P; Franchi, S