BONERA, EMILIANO
BONERA, EMILIANO
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Near-field optical imaging of electromigration damages in passivated metal stripes
2000 Bonera, E; Borghesi, A; Caprile, C
EPR and UV-Raman study of BPSG thin films: structure and defects
2001 Fanciulli, M; Bonera, E; Carollo, E; Zanotti, L
Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon
2002 Bonera, E; Fanciulli, M; Batchelder, D
Crystal defects and junction properties in the evolution of device fabrication technology
2002 Mica, I; Polignano, M; Carnevale, G; Ghezzi, P; Brambilla, M; Cazzaniga, F; Martinelli, M; Pavia, G; Bonera, E
Development of a combined confocal and scanning near-field Raman microscope for deep UV laser excitation
2002 Sands, H; Demangeot, F; Bonera, E; Webster, S; Bennett, R; Hayward, I; Marchi, F; Smith, D; Batchelder, D
Stress mapping in silicon: Advantages of using a Raman spectrometer with a single dispersive stage
2002 Bonera, E; Fanciulli, M; Batchelder, D
Renishaw Application Note : Imaging of silicon stress in microelectronics using Raman spectroscopy
2003 Bonera, E
Defect generation and suppression in device processes using a shallow trench isolation scheme
2003 Peschiaroli, D; Brambilla, M; Carnevale, G; Cascella, A; Cazzaniga, F; Clementi, C; Cremonesi, C; Gilardini, A; Martinelli, M; Maurelli, A; Mica, I; Pavan, A; Pavia, G; Polignano, F; Soncini, V; Bonera, E
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers
2003 Perego, M; Ferrari, S; Spiga, S; Bonera, E; Fanciulli, M; Soncini, V
Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects
2003 Wiemer, C; Tallarida, G; Bonera, E; Ricci, E; Fanciulli, M; Mastracchio, G; Pavia, G; Marangon, S
Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies
2003 Bonera, E; Scarel, G; Fanciulli, M
Combining high resolution and tensorial analysis in Raman stress measurements of silicon
2003 Bonera, E; Fanciulli, M; Batchelder, D
Energy-band diagram of metal/Lu2O3/silicon structures
2004 Seguini, G; Bonera, E; Spiga, S; Scarel, G; Fanciulli, M
Atomic-layer deposition of Lu2O3
2004 Scarel, G; Bonera, E; Wiemer, C; Tallarida, G; Spiga, S; Fanciulli, M; Fedushkin, I; Schumann, H; Lebedinskii, Y; Zenkevich, A
Crystal and molecular structure of [(eta(5)-C5H4SiMe3)(2)LuCl](2): A precursor for the production of Lu2O3 films
2004 Schumann, H; Fedushkin, I; Hummert, M; Scarel, G; Bonera, E; Fanciulli, M
A full self-consistent methodology for strain-induced effects characterization in silicon devices
2005 Fantini, P; Ghetti, A; Carnevale, G; Bonera, E; Rideau, D
Resonant Raman microscopy of stress in silicon-based microelectronics
2005 Bonera, E; Fanciulli, M
Raman spectroscopy of strain in subwavelength microelectronic devices
2005 Bonera, E; Fanciulli, M; Mariani, M
Dielectric properties of high-kappa oxides: Theory and experiment for Lu-2O-3
2005 Bonera, E; Scarel, G; Fanciulli, M; Delugas, P; Fiorentini, V
Raman stress maps from finite-element models of silicon structures
2006 Bonera, E; Fanciulli, M; Carnevale, G