MARZEGALLI, ANNA
MARZEGALLI, ANNA
DIPARTIMENTO DI SCIENZA DEI MATERIALI
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires
2024 Rovaris, F; Peeters, W; Marzegalli, A; Glas, F; Vincent, L; Miglio, L; Bakkers, E; Verheijen, M; Scalise, E
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation
2024 Rovaris, F; Ge, G; Lanzoni, D; Marzegalli, A; Barbisan, L; Tang, X; Miglio, L; Scalise, E; Montalenti, F
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium
2024 Fantasia, A; Rovaris, F; Abou El Kheir, O; Marzegalli, A; Lanzoni, D; Pessina, L; Xiao, P; Zhou, C; Li, L; Henkelman, G; Scalise, E; Montalenti, F
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro-Disk by 5D X-ray Diffraction Microscopy
2024 Corley-Wiciak, C; Zoellner, M; Corley-Wiciak, A; Rovaris, F; Zatterin, E; Zaitsev, I; Sfuncia, G; Nicotra, G; Spirito, D; von den Driesch, N; Manganelli, C; Marzegalli, A; Schulli, T; Buca, D; Montalenti, F; Capellini, G; Richter, C
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure
2024 Marzegalli, A; Montalenti, F; Scalise, E
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation
2024 Marzegalli, A; Mio, A; Spirito, D; Rovaris, F; Bikerouin, M; Shaffar, G; Meier, V; Capellini, G; Scalise, E
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition
2024 Ge, G; Rovaris, F; Lanzoni, D; Barbisan, L; Tang, X; Miglio, L; Marzegalli, A; Scalise, E; Montalenti, F
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
2024 Corley-Wiciak, C; Zöllner, M; Corley-Wiciak, A; Rovaris, F; Sfruncia, G; Nicotra, G; Zaitsev, I; Manganelli, C; Zatterin, E; Spirito, D; Marzegalli, A; Schulli, T; Von Den Driesch, N; Buca, D; Montalenti, F; Richter, C; Capellini, G
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation
2024 Rovaris, F; Marzegalli, A; Lanzoni, D; Fantasia, A; Ge, G; Montalenti, F; Scalise, E
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect
2023 Miglio, L; Scalise, E; Marzegalli, A; Glas, F
Hexagonal Diamond phase of Si and Ge by nanoindentation
2023 Rovaris, F; Ge, G; Marzegalli, A; Miglio, L; Scalise, E
Hexagonal Si and Ge polytypes for silicon photonics
2023 Scalise, E; Rovaris, F; Marzegalli, A
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations
2022 Barbisan, L; Marzegalli, A; Montalenti, F
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case
2022 Barbisan, L; Scalise, E; Marzegalli, A
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC
2022 Scalise, E; Zimbone, M; Marzegalli, A
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect
2022 Miglio, L; Scalise, E; Marzegalli, A; Glas, F
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy
2022 Vanacore, G; Chrastina, D; Scalise, E; Barbisan, L; Ballabio, A; Mauceri, M; La Via, F; Capitani, G; Crippa, D; Marzegalli, A; Bergamaschini, R; Miglio, L
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4)
2021 Op het Veld, R; Xu, D; Schaller, V; Verheijen, M; Peters, S; Jung, J; Tong, C; Wang, Q; de Moor, M; Hesselmann, B; Vermeulen, K; Bommer, J; Lee, J; Sarikov, A; Pendharkar, M; Marzegalli, A; Koelling, S; Kouwenhoven, L; Miglio, L; Palmstrom, C; Zhang, H; Bakkers, E
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries
2021 Zimbone, M; Sarikov, A; Bongiorno, C; Marzegalli, A; Scuderi, V; Calabretta, C; Miglio, L; La Via, F
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations
2021 Sarikov, A; Marzegalli, A; Barbisan, L; Zimbone, M; Bongiorno, C; Mauceri, M; Crippa, D; La Via, F; Miglio, L