MARZEGALLI, ANNA

MARZEGALLI, ANNA  

DIPARTIMENTO DI SCIENZA DEI MATERIALI  

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Risultati 1 - 20 di 76 (tempo di esecuzione: 0.016 secondi).
Titolo Tipologia Data di pubblicazione Autori File
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 01 - Articolo su rivista 2022 Barbisan L.Scalise E.Marzegalli A.
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 01 - Articolo su rivista 2022 Scalise, EMarzegalli, A +
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 01 - Articolo su rivista 2022 Barbisan L.Marzegalli A.Montalenti F.
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 01 - Articolo su rivista 2022 Vanacore G. M.Scalise E.Barbisan L.Capitani G.Marzegalli A.Bergamaschini R.Miglio L. +
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 02 - Intervento a convegno 2021 Barbisan, LMarzegalli, AMontalenti, F
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 01 - Articolo su rivista 2021 Sarikov A.Marzegalli A.Miglio L. +
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 01 - Articolo su rivista 2021 Scalise E.Sarikov A.Barbisan L.Marzegalli A.Montalenti F.Miglio L. +
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 01 - Articolo su rivista 2021 Sarikov, AndreyMarzegalli, AnnaBarbisan, LucaMiglio, Leo +
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 01 - Articolo su rivista 2021 Barbisan L.Sarikov A.Marzegalli A.Montalenti F.Miglio L.
Stress engineering of boron doped diamond thin films via micro-fabrication 01 - Articolo su rivista 2021 Marzegalli A.Albani M. +
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 99 - Altro 2021 Sarikov A.Marzegalli A.Miglio L. +
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 02 - Intervento a convegno 2020 Bergamaschini, RAlbani, MScalise, EAcciarri, MMarzegalli, AMontalenti, FMIglio, L
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 01 - Articolo su rivista 2020 Scalise E.Barbisan L.Sarikov A.Montalenti F.Miglio L.Marzegalli A.
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 01 - Articolo su rivista 2020 Sarikov, AndreyMarzegalli, AnnaBarbisan, LucaScalise, EmilioMontalenti, FrancescoMiglio, Leo
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 01 - Articolo su rivista 2020 Rovaris F.Marzegalli A.Montalenti F. +
In-plane selective area InSb–Al nanowire quantum networks 01 - Articolo su rivista 2020 Sarikov, AndreyMarzegalli, AnnaMiglio, Leo +
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 02 - Intervento a convegno 2019 SARIKOV, ANDREYAnna MarzegalliLuca BarbisanFrancesco MontalentiL. Miglio
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 02 - Intervento a convegno 2019 Scalise, EMarzegalli, AMontalenti, FMiglio, L
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 02 - Intervento a convegno 2019 Scalise, EMarzegalli, AMontalenti, FMiglio, L
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 02 - Intervento a convegno 2019 Rovaris, F.Marzegalli, A.Montalenti, F. +