MARZEGALLI, ANNA

MARZEGALLI, ANNA  

DIPARTIMENTO DI SCIENZA DEI MATERIALI  

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Risultati 1 - 20 di 84 (tempo di esecuzione: 0.043 secondi).
Titolo Tipologia Data di pubblicazione Autori File
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 01 - Articolo su rivista 2024 Rovaris F.Marzegalli A.Miglio L.Scalise E. +
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 01 - Articolo su rivista 2024 Rovaris F.Lanzoni D.Barbisan L.Miglio L.Marzegalli A.Scalise E.Montalenti F. +
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 02 - Intervento a convegno 2023 Miglio, LScalise, EMarzegalli, A +
Hexagonal Diamond phase of Si and Ge by nanoindentation 02 - Intervento a convegno 2023 Fabrizio RovarisAnna MarzegalliLeonida MiglioEmilio Scalise +
Hexagonal Si and Ge polytypes for silicon photonics 02 - Intervento a convegno 2023 Emilio ScaliseFabrizio RovarisAnna Marzegalli
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 01 - Articolo su rivista 2022 Barbisan L.Marzegalli A.Montalenti F.
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 01 - Articolo su rivista 2022 Barbisan L.Scalise E.Marzegalli A.
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 01 - Articolo su rivista 2022 Scalise, EMarzegalli, A +
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 02 - Intervento a convegno 2022 Miglio, LScalise, EMarzegalli, A +
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 01 - Articolo su rivista 2022 Vanacore G. M.Scalise E.Barbisan L.Capitani G.Marzegalli A.Bergamaschini R.Miglio L. +
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 99 - Altro 2021 Sarikov A.Marzegalli A.Miglio L. +
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 01 - Articolo su rivista 2021 Sarikov A.Marzegalli A.Miglio L. +
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 01 - Articolo su rivista 2021 Sarikov, AndreyMarzegalli, AnnaBarbisan, LucaMiglio, Leo +
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 01 - Articolo su rivista 2021 Barbisan L.Sarikov A.Marzegalli A.Montalenti F.Miglio L.
New approaches and understandings in the growth of cubic silicon carbide 01 - Articolo su rivista 2021 Scalise E.Marzegalli A.Miglio L. +
Stress engineering of boron doped diamond thin films via micro-fabrication 01 - Articolo su rivista 2021 Marzegalli A.Albani M. +
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 01 - Articolo su rivista 2021 Scalise E.Sarikov A.Barbisan L.Marzegalli A.Montalenti F.Miglio L. +
Unveiling Planar Defects in Hexagonal Group IV Materials 01 - Articolo su rivista 2021 Marzegalli A.Scalise E.Miglio L. +
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 02 - Intervento a convegno 2021 Barbisan, LMarzegalli, AMontalenti, F
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 01 - Articolo su rivista 2020 Rovaris F.Marzegalli A.Montalenti F. +