The nucleation mechanism of ubiquitous basal stacking faults observed in hexagonal Si/Ge nanowires is still an enigma. These defects may hinder the exploitation of hexagonal Si/Ge for nano-optoelectronics and quantum technologies. In this work, the formation of the I3 basal stacking faults is investigated at the atomistic level, and results are compared to the experimental findings. We propose that these extended defects are caused by dislocation lines elongated in ⟨112̅0⟩ directions, which in turn arise from glide terminations of the step edges when two growing fronts run into each other.

Rovaris, F., Peeters, W., Marzegalli, A., Glas, F., Vincent, L., Miglio, L., et al. (2024). 2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires. ACS APPLIED NANO MATERIALS, 7(8), 9396-9402 [10.1021/acsanm.4c00835].

2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires

Rovaris F.;Marzegalli A.;Miglio L.;Scalise E.
2024

Abstract

The nucleation mechanism of ubiquitous basal stacking faults observed in hexagonal Si/Ge nanowires is still an enigma. These defects may hinder the exploitation of hexagonal Si/Ge for nano-optoelectronics and quantum technologies. In this work, the formation of the I3 basal stacking faults is investigated at the atomistic level, and results are compared to the experimental findings. We propose that these extended defects are caused by dislocation lines elongated in ⟨112̅0⟩ directions, which in turn arise from glide terminations of the step edges when two growing fronts run into each other.
Articolo in rivista - Articolo scientifico
basal stacking faults; hexagonal diamond SiGe; I3 defect; machine learning interatomic potentials; partial dislocations; SiGe nanowires;
English
15-apr-2024
2024
7
8
9396
9402
partially_open
Rovaris, F., Peeters, W., Marzegalli, A., Glas, F., Vincent, L., Miglio, L., et al. (2024). 2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires. ACS APPLIED NANO MATERIALS, 7(8), 9396-9402 [10.1021/acsanm.4c00835].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/476472
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