SCALISE, EMILIO
SCALISE, EMILIO
DIPARTIMENTO DI SCIENZA DEI MATERIALI
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires
2024 Rovaris, F; Peeters, W; Marzegalli, A; Glas, F; Vincent, L; Miglio, L; Bakkers, E; Verheijen, M; Scalise, E
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation
2024 Rovaris, F; Ge, G; Lanzoni, D; Marzegalli, A; Barbisan, L; Tang, X; Miglio, L; Scalise, E; Montalenti, F
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium
2024 Fantasia, A; Rovaris, F; Abou El Kheir, O; Marzegalli, A; Lanzoni, D; Pessina, L; Xiao, P; Zhou, C; Li, L; Henkelman, G; Scalise, E; Montalenti, F
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure
2024 Marzegalli, A; Montalenti, F; Scalise, E
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation
2024 Marzegalli, A; Mio, A; Spirito, D; Rovaris, F; Bikerouin, M; Shaffar, G; Meier, V; Capellini, G; Scalise, E
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition
2024 Ge, G; Rovaris, F; Lanzoni, D; Barbisan, L; Tang, X; Miglio, L; Marzegalli, A; Scalise, E; Montalenti, F
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate
2024 Bertoni, I; Ugolotti, A; Scalise, E; Miglio, L
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation
2024 Rovaris, F; Marzegalli, A; Lanzoni, D; Fantasia, A; Ge, G; Montalenti, F; Scalise, E
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect
2023 Miglio, L; Scalise, E; Marzegalli, A; Glas, F
Hexagonal Diamond phase of Si and Ge by nanoindentation
2023 Rovaris, F; Ge, G; Marzegalli, A; Miglio, L; Scalise, E
Hexagonal Si and Ge polytypes for silicon photonics
2023 Scalise, E; Rovaris, F; Marzegalli, A
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction
2023 Hu, J; Xiang, Y; Ferrari, B; Scalise, E; Vanacore, G
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case
2022 Barbisan, L; Scalise, E; Marzegalli, A
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC
2022 Scalise, E; Zimbone, M; Marzegalli, A
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect
2022 Miglio, L; Scalise, E; Marzegalli, A; Glas, F
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy
2022 Vanacore, G; Chrastina, D; Scalise, E; Barbisan, L; Ballabio, A; Mauceri, M; La Via, F; Capitani, G; Crippa, D; Marzegalli, A; Bergamaschini, R; Miglio, L
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation
2022 Reichmann, F; Scalise, E; Becker, A; Hofmann, E; Dabrowski, J; Montalenti, F; Miglio, L; Mulazzi, M; Klesse, W; Capellini, G
Morphological evolution and compositional segregation effects in core-shell nanowires
2021 Bergamaschini, R; Scalise, E; Albani, M; Assali, S; Plantenga, R; Koelling, S; Verheijen, M; Bakkers, E; Montalenti, F; Miglio, L
New approaches and understandings in the growth of cubic silicon carbide
2021 La Via, F; Zimbone, M; Bongiorno, C; La Magna, A; Fisicaro, G; Deretzis, I; Scuderi, V; Calabretta, C; Giannazzo, F; Zielinski, M; Anzalone, R; Mauceri, M; Crippa, D; Scalise, E; Marzegalli, A; Sarikov, A; Miglio, L; Jokubavicius, V; Syvajarvi, M; Yakimova, R; Schuh, P; Scholer, M; Kollmuss, M; Wellmann, P
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting
2021 Bergamaschini, R; Plantenga, R; Albani, M; Scalise, E; Ren, Y; Hauge, H; Kolling, S; Montalenti, F; Bakkers, E; Verheijen, M; Miglio, L