Inversion domain boundaries are extended defects affecting cubic silicon carbide (3C-SiC) layers grown on the on-axis (001) Si wafers. Their impact on the device performance is still debated and a clear connection to their electronic properties at the atomistic scale is still missing. By comparing the first-principles atomistic models and scanning transmission electron microscopy imaging, the most relevant structures of inversion domain boundaries laying both in the {110} and {111} planes are identified. Their calculated electronic structures shed light on the relevance that these extended defects may have in the degradation of the performances of the 3C-SiC devices.

Scalise, E., Zimbone, M., Marzegalli, A. (2022). Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC. PHYSICA STATUS SOLIDI B-BASIC RESEARCH [10.1002/pssb.202200093].

Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC

Scalise, E
;
Marzegalli, A
2022

Abstract

Inversion domain boundaries are extended defects affecting cubic silicon carbide (3C-SiC) layers grown on the on-axis (001) Si wafers. Their impact on the device performance is still debated and a clear connection to their electronic properties at the atomistic scale is still missing. By comparing the first-principles atomistic models and scanning transmission electron microscopy imaging, the most relevant structures of inversion domain boundaries laying both in the {110} and {111} planes are identified. Their calculated electronic structures shed light on the relevance that these extended defects may have in the degradation of the performances of the 3C-SiC devices.
Articolo in rivista - Articolo scientifico
Scientifica
density functional theory; extended defects; inversion domain boundaries; SiC; wide-bandgap;
English
Scalise, E., Zimbone, M., Marzegalli, A. (2022). Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC. PHYSICA STATUS SOLIDI B-BASIC RESEARCH [10.1002/pssb.202200093].
Scalise, E; Zimbone, M; Marzegalli, A
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/386950
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