Inversion domain boundaries are extended defects affecting cubic silicon carbide (3C-SiC) layers grown on the on-axis (001) Si wafers. Their impact on the device performance is still debated and a clear connection to their electronic properties at the atomistic scale is still missing. By comparing the first-principles atomistic models and scanning transmission electron microscopy imaging, the most relevant structures of inversion domain boundaries laying both in the {110} and {111} planes are identified. Their calculated electronic structures shed light on the relevance that these extended defects may have in the degradation of the performances of the 3C-SiC devices.
Scalise, E., Zimbone, M., Marzegalli, A. (2022). Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 259(9) [10.1002/pssb.202200093].
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC
Scalise, E
;Marzegalli, A
2022
Abstract
Inversion domain boundaries are extended defects affecting cubic silicon carbide (3C-SiC) layers grown on the on-axis (001) Si wafers. Their impact on the device performance is still debated and a clear connection to their electronic properties at the atomistic scale is still missing. By comparing the first-principles atomistic models and scanning transmission electron microscopy imaging, the most relevant structures of inversion domain boundaries laying both in the {110} and {111} planes are identified. Their calculated electronic structures shed light on the relevance that these extended defects may have in the degradation of the performances of the 3C-SiC devices.File | Dimensione | Formato | |
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Physica Status Solidi b - 2022 - Scalise - Impact of Inversion Domain Boundaries on the Electronic Properties of 3C‐SiC.pdf
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