Miglio, L., Scalise, E., Marzegalli, A., Glas, F. (2022). Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect. Intervento presentato a: GADEST-19. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology, Mondsee, Austria.

Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect

Miglio, L
;
Scalise, E;Marzegalli, A;
2022

relazione (orale)
Hexagonal Ge, Defects
English
GADEST-19. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology
2022
2022
none
Miglio, L., Scalise, E., Marzegalli, A., Glas, F. (2022). Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect. Intervento presentato a: GADEST-19. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology, Mondsee, Austria.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/416581
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